Semiconductor apparatus
专利汇可以提供Semiconductor apparatus专利检索，专利查询，专利分析的服务。并且PURPOSE:To improve the speed of operation by a depletion layer extending from control electrodes to covere most of a current path, another depletion layer extending from two main electrodes to cover a current path between the same electrodes, and by minimizing the storage of minority carriers. CONSTITUTION:In a junction-type bipolar transistor, the impurity concentration Nb in a p -type base layer and the measurement of the layer (w for the distance between p control electrodes and l for the distance between an n type emitter layer and an n-type collector layer) are set forth as follows. When a diffusion potential between layer 2 and control electrode layer 5 and that between layer 2 and collector layer 3 are represented by Vb and Vb2, respectively, and in order to allow depletion layers to cross layer 2 only by each diffusion potential, calculation may be carried out by the given formulas wherein epsilon stands for dielectric constant at 0 deg.C and g for net electric charge. The results show that electrons from emitter 1, although present in p -layer 2, do not behave as minority carriers, but are given drift mobility in the presence of electric field, resulting in the loss of storage therein. Then the capacity between electrodes is reduced because of the depletion of layer 2, causing to improve the speed of operation.，下面是Semiconductor apparatus专利的具体信息内容。
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
| 一种含有背面槽栅及浮空环的逆导型IGBT | 2020-05-11 | 514 |
| 用于快速电流感测和晶体管时序控制的系统和方法 | 2020-05-08 | 313 |
| 一种低损耗模块化多电平换流器及其参数设计方法 | 2020-05-08 | 131 |
| 一种新型智能车位锁 | 2020-05-08 | 377 |
| 一种双极性晶体管和场效应晶体管的整合结构及其制备方法 | 2020-05-11 | 338 |
| 基于负阻效应器件实现磁电阻比值放大的电路结构 | 2020-05-08 | 764 |
| 换流器MMC及基于MMC的直流故障隔离方法和系统 | 2020-05-08 | 92 |
| 用于电膜工艺中非对称极性反转的方法和设备 | 2020-05-08 | 245 |
| 一种基于双极型工艺的轨到轨输入与输出运算放大器 | 2020-05-11 | 633 |
| 一种高兼容性一拖二并联逆变感应加热系统 | 2020-05-11 | 375 |
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