Electrostatic induction type transistor
专利汇可以提供Electrostatic induction type transistor专利检索，专利查询，专利分析的服务。并且PURPOSE: To reduce the power consumption of a transistor connected to an epitaxial layer by prescribing the thickness of the epitaxial layer so that when the epitaxial layer as a channel is grown on a semiconductor substrate, an outward diffusion layer from the substrate to the epitaxial layer and a depletion layer expanding from a gate region to a channel region will not overlap.
CONSTITUTION: On N
+ -type Si substrate 1 as a source region, N
- -tyep layer 2 as a channel region is epitaxy-grown, where P
+ -type gate regions 3 and 4, and N
+ -type drain region 5 between the both and connected to them are diffusion-formed respectively. Next, the entire surface is covered with oxidized film 6, an opening is provided, and Al electrode 7 connected to both regions 3 and 5 is fitted. In this constitution, the thickness of epitaxial layer 2 is so selected that depletion layer 9 generated by regions 3 and 4 and region 8 diffusing toward from substrate 1 into epitaxial layer 2 will not overlap. As a result, when regions 3 and 4 are connected to a lateral PNP bipolar transistor, its base-grounded current amplification factor will nt decrease.
COPYRIGHT: (C)1979,JPO&Japio，下面是Electrostatic induction type transistor专利的具体信息内容。
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