Complementary mos integrated circuit device
专利汇可以提供Complementary mos integrated circuit device专利检索，专利查询，专利分析的服务。并且PURPOSE:To obtain a MOS IC which endures noises applied to a power supply by narrowing a gap between a P -type layer as the guard ring of a P well and a N layer as the channel stopper at the P-channel side at the circumference part of a P-well power supplying contact in comparison with that of any other part. CONSTITUTION:The N PN-type longitudinal bipolar transistor is composed of N -type soruce region 6, N -type drain region 7, P-type well 2 and a N-type substrate. Then, the P NP-type lateral bipolar transistor is composed of P -type source region 8, P -type drain region 9, N-type substrate and P-type well region 2. In this constitution, gap (a) between P -type guard ring 5' near contact 11 supplying power to P-type well region 2 and N -type channel stopper 4' is made narrower than gap (b) between P -type guard ring 5 and N -type channel stopper 4. As a result, impulsive noise charge applied to the power supply is absorbed through the breakdown of the PN junction near contact region 11.，下面是Complementary mos integrated circuit device专利的具体信息内容。
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