Semiconductor diode high-frequency signal generator
阅读：6发布：2022-10-21
专利汇可以提供Semiconductor diode high-frequency signal generator专利检索，专利查询，专利分析的服务。并且A microwave or high-frequency amplifier or frequency converter is disclosed which exploits avalanche phenomena in a semiconductor high-efficiency mode diode placed in a multiply tuned waveguide transmission line circuit. The novel configuration features means substantially avoiding loss of power within the circuit when high frequency or microwave energy is not present in the circuit; such energy may be efficiently amplified or converted when actually present in the circuit.，下面是Semiconductor diode high-frequency signal generator专利的具体信息内容。
1. A high frequency energy converter comprising: hollow transmission line means having first and second opposed inner surface means adapted to supply output high frequency signals, said first inner surface means having reentrant ridged means extending toward said second inner surface means, conductive wall means for conductively short circuiting said hollow transmission line means adjacent one end thereof, negative-resistance high frequency avalanche semiconductor diode means adjacent said conductive wall means in shunt relation for high frequency energy within said transmission line means between said ridge means and said second inner surface means, circuit means for biasing said avalanche diode means with a unidirectional electric field below its characteristic break down field so that substantially no bias current flows through said avalanche diode means, means for supplying a high frequency carrier field across said diode means superimposed upon said unidirectional electric field so that the total electric field across said avalanche diode means rises above a critical value, thereupon triggering bias current flow through said diode means for the purpose of exciting amplified high frequency fields in said hollow transmission line means, first impedance transformer means spaced from said avalanche diode means within said hollow transmission line means in contact with said second inner surface means and adapted to produce substantially resonant carrier and harmonic frequency fields across said diode means in a first portion of said transmission line means, and second impedance transformer means spaced from said first impedance transformer means within said hollow transmission line means in contact with said inner surface means and adapted to cause resonance within a second portion of said transmission line means selectively to said carrier frequency and to two of its harmonics.
2. Apparatus as described in claim 1 wherEin said conductive wall means, said avalanche diode means and said impedance matching means are so constructed and arranged as to provide oscillating high frequency energy with strong fundamental and harmonic components in the plane of said diode means.
3. Apparatus as described in claim 1 wherein said circuit means comprises conductor means passing through said ridge portion in capacity coupled relation therewith for excluding high frequency energy flow on said conductor.
4. Apparatus as described in claim 1 wherein said second impedance transformer means comprises first and second spaced transformer elements.
5. Apparatus as described in claim 4 wherein said first impedance transformer means and said second and third spaced transformer elements each comprise substantially similar bodies of electrically conductive material spaced along said ridged means for forming low impedance sections of of transmission line in cooperation with said ridged means.
6. Apparatus as in claim 5 wherein said bodies have a dimension along said ridged means substantially equal to one-eighth wavelength at the frequency of said resonant carrier field.
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