Electrode wiring forming method for semiconductor device
专利汇可以提供Electrode wiring forming method for semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To avoid the defective dielectric strength and the short between the electrode wirings by changing the upper and side surfaces of the Al wiring via the Al wiring via the anode oxidation method into the alumina and furthermore changing the Si layer between wirings into the silicon dioxide of the insulator.
CONSTITUTION: Opening 3 is provided to insulating film 2 which covers one main surface of silicon substrate 1 to which the necessary impurity dope layer is formed. Silicon thin film 4 is formed on substrate 1, and aluminum thin film 5 is formed on film 4. Then film 5 is removed through the selective etching, and the anode oxidizing process is given to substrate 1. As a result, the periphery of film 5 is changed to alumina 7, and film 4 between aluminum wirings is changed to silicon oxide film 8. After this, alumina 7 is removed selectively through etching to form the electrode wiring for the semiconductor device
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5 浮栅的制备方法
