EXTENDED-DRAIN STRUCTURES FOR HIGH VOLTAGE FIELD EFFECT TRANSISTORS
专利汇可以提供EXTENDED-DRAIN STRUCTURES FOR HIGH VOLTAGE FIELD EFFECT TRANSISTORS专利检索，专利查询，专利分析的服务。并且Planar and non-planar field effect transistors with extended-drain structures, and techniques to fabricate such structures. In an embodiment, a field plate electrode is disposed over an extended-drain, with a field plate dielectric there between. The field plate is disposed farther from the transistor drain than the transistor gate. In a further embodiment, an extended-drain transistor has source and drain contact metal at approximately twice a pitch, of the field plate and the source and/or drain contact metal. In a further embodiment, an isolation dielectric distinct from the gate dielectric is disposed between the extended-drain and the field plate. In a further embodiment, the field plate may be directly coupled to one or more of the transistor gate electrode or a dummy gate electrode without requiring upper level interconnection. In an embodiment, a deep well implant may be disposed between a lightly-doped extended-drain and a substrate to reduce drain-body junction capacitance and improve transistor performance.，下面是EXTENDED-DRAIN STRUCTURES FOR HIGH VOLTAGE FIELD EFFECT TRANSISTORS专利的具体信息内容。
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