专利汇可以提供ELECTROSTATIC PROTECTIVE DEVICE专利检索,专利查询,专利分析的服务。并且The present invention discloses an electrostatic protective device structure, which comprises a CMOS transistor that is disposed entirely above a P-type silicon substrate and arranged into a multi-finger-pattern structure, wherein on the outermost side on both sides of this electrostatic protective device structure is the source region of the MOS transistor, an active region of other drain region or source region in addition to the outermost source region on both sides is arranged in comb teeth pattern and in pairwise intersection, between the active regions of the adjacent drain region or source region is a field oxide region isolation, and on the drain region or source region is disposed a contact hole connecting metal with the active region, wherein the contact hole on the comb-tooth-pattern and pairwise intersected active region is located at the top of the comb-tooth-pattern active region, i.e. close to a side of the field oxide region isolation far away from the polysilicon gate. The present invention, mainly applied to electrostatic protection of a low-voltage MOS, is capable of not only improving its electrostatic protection capability effectively but also minimizing the occupied area of the protective device, and able to be used as both an electrostatic protective device and a power device.,下面是ELECTROSTATIC PROTECTIVE DEVICE专利的具体信息内容。
The present invention relates to the field of semiconductor manufacture, especially to an electrostatic protective device.
Static electricity is an objective natural phenomenon, and has a variety of ways of production, such as contact, friction, and induction between electrical appliances. Static electricity is characterized by long-term accumulation, high voltage, low electric quantity, small current and short duration of action. Static electricity causes serious harm in a number of fields. Electrification by friction and human body static are two big hazards in the electronics industry, often resulting in unstable operation of electrical and electronic products, and even damage. ESD is an academic subject formed since the mid-20th century for studying generation, harm, protection and the like of static electricity, with the electrostatic protection equipment internationally customarily generally referred to as ESD.
For a product applied to power management, a self-protection solution is used as its electrostatic protection solution because of its large area, as shown in
The technical problem to be solved by the present invention is to provide an electrostatic protective device with improved electrostatic protection capability, without increasing area of the device.
In order to solve above technical problem, the present invention provides an electrostatic protective device, the structure of which comprises a CMOS transistor that is disposed entirely above a P-type silicon substrate and arranged into a multi-finger-like structure, wherein on the outermost side on both sides of this electrostatic protective device is the source region of the MOS transistor, an active region of other drain region or source region in addition to the outermost source region on both sides is arranged in a comb teeth pattern and in pairwise intersection, between the active regions of the adjacent drain region or source region is a field oxide region isolation, on the drain region or source region is disposed a contact hole connecting metal with the active region, wherein the contact hole on the comb-tooth-pattern and pairwise intersected active region is located at the top of the comb-tooth-pattern active region, i.e. close to a side of the field oxide region isolation far away from the polysilicon gate.
With an axial direction a defined, the contact holes of the adjacent MOS transistors in addition to those of the outermost source region on both sides are not disposed in the same straight line, a source contact hole of each of the MOS transistors being at a same distance from its respective polysilicon gate, a drain contact hole of each of the MOS transistors being at a same distance from its respective polysilicon gate.
The MOS transistor is of an N type or a P type.
The present invention, based on the existing multi-finger-like structure, forms a comb-tooth-pattern structure by inserting a field oxide region isolation into the active region of the drain region and source region of each of the MOS transistors in addition to the outermost source region on both sides; when static electricity enters this protection structure from the drain electrode, the current path through which it flows is as shown in
The present invention, mainly applied to electrostatic protection of a low-voltage MOS, is capable of not only improving its electrostatic protection capability effectively but also minimizing the occupied area of the protective device, even capable of being applied to power management products and an application requiring great switching current, and able to be used as both an electrostatic protective device and a power device.
The present invention will be further described below in detail with reference to drawings and embodiments:
As shown in
The connection structure of the electrostatic protective device of the present invention applied to an electrostatic protection circuit is as shown in
The present invention is described in detail through the above specific embodiment and example, which however do not restrict the present invention. Without departing from the principle of the present invention, those skilled in the art can also make many variations and improvements, which should also be considered to be within the scope of protection of the present invention.
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