Formation of film
专利汇可以提供Formation of film专利检索，专利查询，专利分析的服务。并且PURPOSE:To raise the utilization factor of a raw gas for deposition and to form a film at a low cost by cooling and liquefying the unutilized and unreacted raw gas for film deposition in a reaction vessel, then heating and vaporizing the liq. and meantime removing other gases by utilizing the b.p. difference. CONSTITUTION:A raw gas SiH4 for deposition is introduced into a reaction vessel 1 from a cylinder 10 and a gaseous dopant B2H6 is introduced from a cylinder 11. Glow discharge is generated by an ordinary method and a film is formed on a substrate 12. At this time, the waste gas is sucked into a tank 14 by a pump 2 and cooled by a cooler 16 to about -110--180 deg.C to liquefy SiH4. H2, N2, O2, etc., having lower b.p. than SiH4 are discharged. After a film is formed, the temp. is adjusted to about -110--93 deg.C by regulating the cooler 16 to vaporize SiH4 which is stored in a tank 15 and the SiH4 is separated from the gases having higher b.p. than SiH4. Consequently, SiH4 is efficiently recovered and the utilization factor is raised.，下面是Formation of film专利的具体信息内容。
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