专利汇可以提供Schottky barrier diodes as impedance elements and method of making same专利检索,专利查询,专利分析的服务。并且The reverse characteristic of Schottky barrier diodes provides easily fabricated, small area, high impedance elements for micropower circuits. Advantageously, the diodes are fabricated within semiconductive integrated circuit arrays by forming rhodium silicide on relatively high resistivity P-type silicon. Such diodes are particularly useful in the loads of flip-flops used as cells of a semiconductor memory.,下面是Schottky barrier diodes as impedance elements and method of making same专利的具体信息内容。
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