Field effect transistor
专利汇可以提供Field effect transistor专利检索，专利查询，专利分析的服务。并且PURPOSE:To obtain a GaAs FET having a high surge resistance in a semiconductor substrate, by providing a region to be P-N joined with a source region in contact with the source region, and by connecting the region to a gate electrode. CONSTITUTION:An active channel layer 32, a source region 33 and a drain region 34 are selectively formed on a semi-insulating substrate 31, by means of the ion implantation. The regions 33 and 34 are of N type and have a sufficient concentration of impurity to provide an N type layer of a diode in a part of the region 33. A P type region 40 of the diode is formed by the ion implantation. After annealing, ohmic contacting metals 35, 36 and 41 are provided on the regions 33, 34 and 40, while a Schottky contacting gate electrode 37 is provided on the active channel layer 32, and the electrode 37 is connected with the metal 41. In such a manner, the source region is also used as one region of the protective diode, and the parasitic resistace or inductance due the wiring is substantially reduced. Moreover, the required chip area is also reduced substantially.，下面是Field effect transistor专利的具体信息内容。
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| SEMICONDUCTOR DEVICE ASSEMBLIES AND CIRCUITS | 2022-06-20 | 2 |
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