Schottky barrier diode and method of making the same
阅读：513发布：2023-10-30
专利汇可以提供Schottky barrier diode and method of making the same专利检索，专利查询，专利分析的服务。并且A Schottky barrier diode diode including a body of P type single crystalline silicon and a film of hafnium on a surface of the body and forming a surface barrier rectifying junction with the body. The diode has a barrier height of approximately 0.90 electron volts.，下面是Schottky barrier diode and method of making the same专利的具体信息内容。
2. A method of making a Schottky surface barrier diode comprising coating at least a portion of a surface of a body of P type silicon semiconductor material with a film of hafnium metal to provide a surface barrier rectifying junction between said film and the body.
3. The method of claim 2 including the step of annealing the hafnium film in an atmosphere of dry helium at a temperature of between 450* C and 550* C.
4. The method of claim 3 including the step of cleaning the surface of the body prior to coating the surface with the hafnium film.
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