Schottky barrier transit time negative resistance diode circuits专利检索-肖特基二极管二极管电子零件及设备专利检索查询-专利查询网

Schottky barrier transit time negative resistance diode circuits

阅读：397发布：2023-11-04

专利汇可以提供Schottky barrier transit time negative resistance diode circuits专利检索，专利查询，专利分析的服务。并且In a preferred form, a negative resistance diode comprises a semiconductor wafer contained between two Schottky barrier contacts. The diode is biased below avalanche breakdown, but above a critical ''''reach-through'''' voltage, which, with appropriate diode parameters and an appropriate external circuit, causes minority carriers to be injected by the forward-biased contact to give a transit time negative resistance. When used as an oscillator, the device gives a significantly lower noise figure than analogous Impatt diodes. Amplifier and voltage limiter embodiments are also described.，下面是Schottky barrier transit time negative resistance diode circuits专利的具体信息内容。

权利要求

1. An electronic circuit comprising: a diode comprising a semiconductor wafer contained between first and second contacts; the diode containing two rectifying junctions, one of which is a Schottky barrier junction formed by the first contact and the wafer; said wafer being sufficiently thin that both the flat-band voltage and the reach-through voltage between the two rectifying junctions are smaller than the avalanche breakdown voltage; means for forward-biasing the Schottky barrier junction at a value between the reach-through voltage and the flat-band voltage; the minority carrier barrier of said forward-biased Schottky barrier junction being significantly smaller than one-half the band-gap energy of said wafer, thereby permitting diode conduction by copious minority carrier injection.

2. The electronic circuit of claim 1 wherein: said forward-biasing means, said diode, and said circuit are appropriately arranged such that the voltage in the wafer never reaches the avalanche breakdown voltage.

3. The electronic circuit of claim 2 wherein: the diode is included within a resonant circuit having a resonant frequency f; the transit time of minority carriers between said rectifying junctions is on the order of three-fourths of a period of oscillation at said resonant frequency f; and the biasing means includes a source of d-c energy, whereby the d-c energy is converted to oscillatory energy of said frequency f.

4. The electronic circuit of claim 2 wherein: the diode is forward-biased by a d-c source at a d-c voltage below the flat-band voltage, and is additionally forward-biased by a signal component, whereby said minority carrier injection occurs when the sum of the d-c component and the signal component exceeds the reach-through voltage.

5. The electronic circuit of claim 4 wherein: the diode shunts a signal propagating transmission line to a dissipative impedance, whereby the diode limits the signal voltage conducted by the transmission line.

6. The electronic circuit of claim 2 wherein: the majority carrier concentration of the wafer is significantly higher in a limited region immediately adjacent the Schottky barrier junction than in the remainder of the wafer, thereby permitting a relatively higher electric field in the remainder of the wafer to improve carrier transit efficiency.

7. A diode comprising: a semiconductor wafer contained between said first and second contacts; the diode containing two rectifying junctions, one of which is a Schottky barrier junction formed by the first contact and the wafer; said wafer being sufficiently thin that both the flat-band voltage and the reach-through voltage between the two rectifying junctions are smaller than the avalanche breakdown voltage; said Schottky barrier junction being adapted to be forward-biased at a value between reach-through voltage and the flat-band voltage; the minority carrier barrier of said Schottky barrier junction under said forward-bias condition being significantly smaller than one-half the band-gap energy of said wafer, thereby permitting diode conduction by copious minority carrier injection.

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Schottky barrier transit time negative resistance diode circuits

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