Manufacture of semiconductor device
专利汇可以提供Manufacture of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE: To obtain a manufacturing method of a semiconductor element which has high yield, fine pattern with high reliability, and beam lead structure by a method wherein, when a Ti-Pt layer is etched, dry etching is performed by using an Au layer as a mask, and applying etching gas whose main component is chlorine gas and to which Ar or O
2 is added.
CONSTITUTION: After Ti-Pt layers 18, 19 are formed on a semiconductor substrate 11 by vapor deposition method, a first Au layer 111 turning to an electrode is selectively formed by photo resist method and plating method. A second Au layer 112 turning to a beam lead is formed by applying the above Ti-Pt layers 18, 19 and the above first Au layer 111 to electric conducting path, and by using photo resist method and plating method. The above Pt 19 and Ti 18 are etched by dry etching wherein the above first Au layer 111 is used as a mask and the following is used as an etching gas; the main component said gas is chloride system gas, to which Ar or O
2 is added. After that, by using polishing method and wet resist method, rear working is performed, thereby manufacturing a beam lead type semiconductor device. For example, the above- mentioned semiconductor device is a GaAs Schottky diode.
COPYRIGHT: (C)1990,JPO&Japio，下面是Manufacture of semiconductor device专利的具体信息内容。
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