SCHOTTKY-EMISSION THIN-FILM VARISTOR DIODE FORMED OF Al/Al{11 O{11 /M/Mn{11 O{11 /Pb AND A METHOD OF FABRICATING THE DIODE
专利汇可以提供SCHOTTKY-EMISSION THIN-FILM VARISTOR DIODE FORMED OF Al/Al{11 O{11 /M/Mn{11 O{11 /Pb AND A METHOD OF FABRICATING THE DIODE专利检索，专利查询，专利分析的服务。并且The diode is formed in a bell-jar system using a vapordeposition technique to deposit a sandwich of thin-films on a glass substrate, the films including aluminum, aluminum oxide, manganese, manganese oxide and lead. Thus a five-layer diode system M/1/M/1/M is provided in which the 1/M/1 is a barrier member formed of the oxides and the manganese and having a thickness about 200 A. The electrodes are the aluminum and lead, i.e., the metals ''''M'''' which sandwich the barrier 1/M/1. Critically, the manganese oxide film is formed by a two-step process in which the deposited manganese film first is permitted to oxidize slowly, preferably, in the residual air of a reduced atmosphere of about 2- 8 X 10 5 torr. This oxidizing exposure, which may last for about 5 minutes, is followed by a relatively rapid oxidation of the manganese at atmosphere pressure.，下面是SCHOTTKY-EMISSION THIN-FILM VARISTOR DIODE FORMED OF Al/Al{11 O{11 /M/Mn{11 O{11 /Pb AND A METHOD OF FABRICATING THE DIODE专利的具体信息内容。
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