Schottky-barrier diode process and devices
专利汇可以提供Schottky-barrier diode process and devices专利检索，专利查询，专利分析的服务。并且A SCHOTTKY-BARRIER DIODE CAPABLE OF EXHIBITING SUPERIOR REVERSE-BIAS OPERATING CHARACTERISTICS AND PARTICULARLY SUITABLE FOR LARGE-SCALE INTEGRATION CAN BE FABRICATED BY A METHOD COMPATIBLE WITH STANDARD SEMICONDUCTOR PROCESSING TECHNIQUES. BRIEFLY, A HIGHLY CONDUCTIVE METALLIC LAYER OVERLYING A REGION OF SEMICONDUCTOR MATIERAL IS HEATED TO A TEMPERATURE SUFFICIENT TO ENABLE SOLID-STATE DIFFUSION TO OCCUR BETWEEN THE SEMICONDUCTOR AND METAL, BUT BELOW THE EUTECTIC POINT OF BOTH. A METAL-SEMICONDUCTOR JUNCTION IS THEREBY FORMED, WHEREIN THE JUNCTION LIES BELOW THE ORIGINAL SURFACE OF THE SEMICONDUCTOR REGION BUT HAS AN EDGE AT THE SURFACE, AND UNWANTED IMPUJRITIES ARE PREVENTED FROM INTERFERING WITH OPERATION.，下面是Schottky-barrier diode process and devices专利的具体信息内容。
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
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| 一种直流高压隔离检测方法 | 2020-10-26 | 1 |
| Voltage generating circuit using a Schottky barrier diode | 2022-09-22 | 0 |
| Semiconductor device and a method of manufacturing the same | 2021-12-02 | 2 |
| Manufacture of semiconductor device | 2022-10-13 | 0 |
| Method of fabricating a semiconductor device with Schottky barrier | 2022-08-03 | 3 |
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| 在共同基體上製造肖特基能障二極體及非晶形矽薄膜太陽電池之方法 | 2022-10-08 | 1 |
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