One transistor dynamic memory cell专利检索-动态随机存取存储器资料储存系统专利检索查询-专利查询网

One transistor dynamic memory cell

阅读：982发布：2023-05-10

专利汇可以提供One transistor dynamic memory cell专利检索，专利查询，专利分析的服务。并且A dynamic memory storage cell requires only one field effect transistor to store binary data. The data is represented in the form of stored charge utilizing the inherent metal-insulatorsemiconductor capacitance and P-N junction capacitance at the source node of the field-effect transistor. An extended portion of the source diffusion in combination with overlying thin oxide and metal layers form a capacitor that further enhances charge storage. A matrix of the memory cells form an extremely high density random access memory.，下面是One transistor dynamic memory cell专利的具体信息内容。

权利要求

1. A dynamic data storage cell comprising: a. a semiconductor substrate of one conductivity type; b. a first elongated diffused region of opposite conductivity type extending to the surface of said substrate; c. a second diffused region of said opposite conductivity spaced from said first diffused region and substantially parallel thereto, said second diffused region also extending to the surface of said substrate; d. a third diffused region underlying said second diffused region, of said one conductivity type and having a lower resistivity than said substrate, formed within at least a portion of the area occupied by said second diffused region, forming a P-N junction therewith; e. an insulating layer covering the surface of said substrate, said insulating layer having a first thin region overlying an area of said substrate bridging said first and second diffused regions thereby defining a channel of a FET, and a second thin region overlying a portion of said second diffused region; f. a first elongated conductive region extending over said first thin insulating region, thereby forming a gate of said FET, said conductive region substantially orthogonal to said first diffused region; g. a second elongated conductive region spaced from and substantially parallel to said first elongated conductive region, extending over said second thin region to form a capacitor; and h. means for connecting said second conductive region to said substrate.

2. A dynamic data storage cell according to claim 1 wherein said substrate comprises silicon doped to a level on the order of 1015 atoms/cm3 and said third diffused region has an impurity concentration on the order of 1017 atoms/cm3.

说明书全文

相关专利内容

标题	发布/更新时间	阅读量
具有每比特位2个存储单元的、具有公共字线的快速存取DRAM架构	2020-05-11	188
X射线检测器、半导体存储器件及其测试方法和制造方法	2020-05-11	96
一种预失真系数处理方法和装置	2020-05-11	852
片上网络处理系统和片上网络数据处理方法	2020-05-08	819
目标行产生器、动态随机存取存储器以及目标行的判定方法	2020-05-11	811
用于改进动态随机存取存储器(DRAM)中组件可靠性的系统和方法	2020-05-08	197
动态随机存取存储器、内存管理方法、系统及存储介质	2020-05-11	373
逻辑到物理映射	2020-05-08	400
存储模块以及包括其的存储系统	2020-05-11	377
一种多针绗缝机控制器	2020-05-08	800

高效检索全球专利

专利汇是专利免费检索,专利查询,专利分析-国家发明专利查询检索分析平台，是提供专利分析，专利查询，专利检索等数据服务功能的知识产权数据服务商。

我们的产品包含105个国家的1.26亿组数据，免费查、免费专利分析。

申请试用

分析报告

专利汇分析报告产品可以对行业情报数据进行梳理分析，涉及维度包括行业专利基本状况分析、地域分析、技术分析、发明人分析、申请人分析、专利权人分析、失效分析、核心专利分析、法律分析、研发重点分析、企业专利处境分析、技术处境分析、专利寿命分析、企业定位分析、引证分析等超过60个分析角度，系统通过AI智能系统对图表进行解读，只需1分钟，一键生成行业专利分析报告。

申请试用

动态随机存取存储器热门专利

热门分类

One transistor dynamic memory cell

该功能需要专业版企业版VIP权限，您可以：