专利汇可以提供Production of gallium garnet single crystal专利检索,专利查询,专利分析的服务。并且PURPOSE: To obtain on an industrial scale the title single crystal of large diameter with few crystal defects by, when Ga
2 O
3 and rare earth metal oxide are heated and melted in an Ir crucible and the resulting single crystal is pulled by the Czochralski process in an atmosphere of specified oxygen partial pressure, forcedly exhausting the IrO
2 produced out of the system.
CONSTITUTION: When gallium garnet single crystal is to be produced through the Czochralski process, a raw material comprising Ga
2 O
3 and rare earth metal oxide (e. g. Gd
2 O
3 ) is heated and melted in an Ir crucible and the resulting single crystal is pulled. Throughout the above process, the atmosphere is maintained at an oxygen partial pressure of 24(ca. 3.2%)-100(ca. 13.2%)mmHg (pref. 24-40 (ca. 5.3%)mmHg), and the IrO
2 produced is forcedly exhausted out of the system from the proximity of raw material melt and single crystal growth region using e.g. an exhaust fan or suction pump. Thereby the objective gallium garnet single crystal ≥75mm in diameter to be used for magnetic bubble memories or working materials for magnetically freezing machines can be obtained.
COPYRIGHT: (C)1990,JPO&Japio,下面是Production of gallium garnet single crystal专利的具体信息内容。
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