A semiconductor material having a stepwise surface structure of (0001)-plane terraces and (11-2n)-plane steps [n≥0] on the SiC substrate, a semiconductor device using the same and a method of producing the semiconductor material in which a carbon-rich surface is formed on the SiC substrate prior to epitaxial growth of an SiC crystal, the carbon-rich surface satisfies the ratio R = (I_284.5/I_282.8) >0.2, wherein I_282.8 (I_SiC) is an integrated intensity of a Cls signal having a peak at the binding energy relating to stoichiometric SiC (in the region of 282.8 eV), and I_284.5 (I_C) is an integrated intensity of a C1s signal having a peak at the binding energy relating to graphite, SiC_x (x>1), or Si_yCH_1-y (y<1) (in the region of 284,5 eV), as measured by an X-ray photoelectron spectroscopic analyzer (XPS).

A silver halide color photographic material comprising at least one layer of, respectively, a blue-sensitive silver halide emulsion layer containing a yellow color coupler, a green-sensitive silver halide emulsion layer containing a magenta color coupler, and a red-sensitive silver halide emulsion layer containing a cyan color coupler, on a support;

wherein a specific coupler is contained in at least one of the above-mentioned photosensitive silver halide emulsion layer, and wherein chemically sensitized silver halide grains are contained in at least one of the above-mentioned silver halide emulsion layers and are composed of grains with an interior core part consisting of a silver halide containing 10 to 40 mol% of silver iodide, wherein the core part is covered with a silver halide of a lower silver iodide content, and the surface of the grains, when analyzed by means of the XPS (X-Ray Photoelectron Spectroscopy) surface analysis method, consist of a silver halide containing greater than 5 mol% of silver iodide.

There is provided a surface-coated cermet cutting tool with a hard-coating layer having excellent chipping resistance. The surface-coated cermet cutting tool is formed by coating, on a surface of a tool substrate made of WC-based cemented carbide or TiCN-based cermet, a hard-coating layer including the following upper and lower layers (a) and (b): (a) as the lower layer, a Ti compound layer having at least one or two of a TiC layer, a TiN layer, a TiCN layer, a TiCO layer and a TiCNO layer, all of which are deposited by chemical vapor deposition, the titanium compound layer having a total average thickness of 3 to 20 µm, and (b) as the upper layer, a heat-transformed α-type Al oxide layer formed by carrying out a heat-transforming treatment in a state that titanium oxide particulates satisfying the composition formula: TiO_Y, (where value Y is 1.2 to 1.9 in an atomic ratio to Ti when measured by Auger Electron Spectroscopy) and chemically deposited as a transformation starting material are dispersedly distributed on a surface of an Al oxide layer having a κ-type or θ-type crystal structure deposited by chemical vapor deposition and satisfying the composition formula: (Al_1-XZr_X)₂O₃ (where value X is 0.003 to 0.05 in an atomic ratio when measured by an electron probe micro-analyzer (EPMA)) to thereby transform the crystal structure of the Al oxide layer having the κ-type or θ-type crystal structure into an α-type crystal structure, the heat-transformed α-type Al oxide layer having an average thickness of 1 to 15 µm.

A process for producing an extrusion laminated film or sheet is disclosed, which process uses no chemical primer and comprises a plastic substrate and a resin for extrusion laminating which process uses no chemical primer and comprises:

• (A) surface oxidizing at least one surface of the plastic substrate:
  • (1) when the plastic substrate is a polyester resin,$$\text{Δ (O/C) ≧ 0.08; or}$$
  • (2) when the plastic substrate is not a polyester resin,$$\text{Δ (O/C) ≧ 0.05}$$
  wherein Δ (O/C) = (O/C)* - (O/C)°, where (O/C)° represents the ratio of the number of oxygen atoms to the number of carbon atoms on the untreated surface of the plastic substrate measured by an Electron Spectroscopy for Chemical Analysis (ESCA) method, and (O/C)* represents the ratio of the number of oxygen atoms to the number of carbon atoms on the oxidized surface of the plastic substrate measured by the ESCA method;
• (B) melt-extruding a resin selected from polyethylene resins, polypropylene resins, ethylene-vinylester copolymer resins and ethylene-(metha)acrylate copolymer resins into a molten web at a temperature of from 180°C to 340°C and treating at least one surface of the molten web with ozone; and
• (C) contacting the oxidized surface of the plastic substrate obtained in step (A) with the ozone-treated surface of the molten web obtained in step (B), and adhering the molten web onto the substrate under pressure.