Tantalum compound and methods of forming thin film and fabricating integrated circuit device by using the same |
|||||||
| 申请号 | US15298275 | 申请日 | 2016-10-20 | 公开(公告)号 | US10134582B2 | 公开(公告)日 | 2018-11-20 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD.; | 发明人 | Seung-min Ryu; Takanori Koide; Naoki Yamada; Jae-soon Lim; Tsubasa Shiratori; Youn-joung Cho; | ||||
| 摘要 | A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I): | ||||||
| 权利要求 | |||||||
| 说明书全文 | |||||||
QQ群二维码
意见反馈
意见反馈