Preparation of charge transfer complex |
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| 申请号 | JP25451190 | 申请日 | 1990-09-25 | 公开(公告)号 | JPH03173832A | 公开(公告)日 | 1991-07-29 |
| 申请人 | Semiconductor Energy Lab Co Ltd; | 发明人 | MIYANAGA SHOJI; HONGO MASAFUMI; | ||||
| 摘要 | PURPOSE: To readily mass produce a charge transfer complex metal in a short time by forming a complex comprising a donor molecule and an acceptor molecule on a substrate by vapor phase method and then annealing the complex in a specific temperature range. CONSTITUTION: In obtaining a charge transfer complex metal by using a vapor phase reaction device consisting of a reaction tube 1 made of pyrex glass, a ceramic tube 2 to support the reaction tube, an electric furnace 3 and a chromel-alumel thermocouple 7 to monitor temperature, first, a donor molecular crystal D and an acceptor molecular crystal A are fed to pyrex glass tubes 5 and 6, respectively. Position relationship of height is determined by vaporization base (sublimation temperature) of molecule, the reaction tube 1 is evacuated, optimum temperature is set depending upon sublimation temperature of each molecule and D x A y complex crystal 4 having 100-200μm width and 1mm height is obtained on a Teflon substrate 8 in about one hours. The crystal is annealed by a muffle furnace at 100-150°C for 2 hours to give the objective substance. COPYRIGHT: (C)1991,JPO&Japio |
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