| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 41 | Semiconductor device manufacturing method | US14821496 | 2015-08-07 | US09922858B2 | 2018-03-20 | Masaaki Tachioka; Tsunehiro Nakajima |
| Provided is a semiconductor device manufacturing method that includes joining a support substrate to a back side of a semiconductor wafer across a ceramic adhesive layer and a mask, to form a joined body. The method further includes forming a functional structure on a front side of the semiconductor wafer. The method further includes detaching the support substrate from the semiconductor wafer by removing the ceramic adhesive layer and the mask. The method further includes a back side processing step of carrying out back side processing on the back side of the semiconductor wafer. | ||||||
| 42 | Method of manufacturing a device | US14425407 | 2013-09-09 | US09837374B2 | 2017-12-05 | Hideki Matsushita; Masanobu Kitada |
| Provided is a device in which the metal content existing in a joining interface is controlled. A manufacturing method for the device comprises: a step in which the surfaces of a first substrate and a second substrate are activated using a FAB gun; a step in which a plurality of metals are discharged by using the FAB gun to sputter a discharged metal body comprising the plurality of metals, and the plurality of metals are affixed to the surfaces of the first substrate and the second substrate; a step in which the first substrate and the second substrate are joined at room temperature; and a step in which heating is performed at a temperature that is high in comparison to the agglomeration start temperature of the plurality of metals and of the elements that constitute the first substrate or the second substrate. With regards to the step in which the plurality of metals are affixed, the density of the plurality of metals existing on the joining interface of the first substrate and the second substrate is set to 1×1012/cm2 or less by adjusting the exposure area of the discharged metal body. | ||||||
| 43 | Quantum dot films, lighting devices, and lighting methods | US15018512 | 2016-02-08 | US09804319B2 | 2017-10-31 | Robert S. Dubrow; William P. Freeman; Ernest Lee; Paul Furuta |
| Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices. | ||||||
| 44 | RESIN COMPOSITION AND FIXING METHOD FOR PLATE-SHAPED WORKPIECE | US15423774 | 2017-02-03 | US20170233609A1 | 2017-08-17 | Seiji Harada; Makoto Shimotani |
| Disclosed herein is a resin composition for fixing a plate-shaped workpiece. The resin composition includes a composition and a photopolymerization initiator added to the composition. This composition is composed of (meth)acrylate and a plasticizer or a reactive diluent. Preferably, the composition constituting the resin composition contains 30% to 45% by mass of (meth)acrylate having an urethane bond, 5% to 15% by mass of (meth)acrylate not having an urethane bond, and 40% to 65% by mass of plasticizer, which is an ester. | ||||||
| 45 | PRINTING TRANSFERABLE COMPONENTS USING MICROSTRUCTURED ELASTOMERIC SURFACES WITH PRESSURE MODULATED REVERSIBLE ADHESION | US15195733 | 2016-06-28 | US20170133248A1 | 2017-05-11 | Etienne Menard; John A. Rogers; Seok Kim; Andrew Carlson |
| In a method of printing a transferable component, a stamp including an elastomeric post having three-dimensional relief features protruding from a surface thereof is pressed against a component on a donor substrate with a first pressure that is sufficient to mechanically deform the relief features and a region of the post between the relief features to contact the component over a first contact area. The stamp is retracted from the donor substrate such that the component is adhered to the stamp. The stamp including the component adhered thereto is pressed against a receiving substrate with a second pressure that is less than the first pressure to contact the component over a second contact area that is smaller than the first contact area. The stamp is then retracted from the receiving substrate to delaminate the component from the stamp and print the component onto the receiving substrate. Related apparatus and stamps are also discussed. | ||||||
| 46 | Printing transferable components using microstructured elastomeric surfaces with pressure modulated reversible adhesion | US13237375 | 2011-09-20 | US09412727B2 | 2016-08-09 | Etienne Menard; John A. Rogers; Seok Kim; Andrew Carlson |
| In a method of printing a transferable component, a stamp including an elastomeric post having three-dimensional relief features protruding from a surface thereof is pressed against a component on a donor substrate with a first pressure that is sufficient to mechanically deform the relief features and a region of the post between the relief features to contact the component over a first contact area. The stamp is retracted from the donor substrate such that the component is adhered to the stamp. The stamp including the component adhered thereto is pressed against a receiving substrate with a second pressure that is less than the first pressure to contact the component over a second contact area that is smaller than the first contact area. The stamp is then retracted from the receiving substrate to delaminate the component from the stamp and print the component onto the receiving substrate. Related apparatus and stamps are also discussed. | ||||||
| 47 | Bonding apparatus | US14561572 | 2014-12-05 | US09385104B2 | 2016-07-05 | Daisuke Tani; Koichi Takahashi |
| Provided is a flip-chip bonding apparatus (500) capable of stacking and bonding a second-layer of the semiconductor chip (30) onto a first-layer of the semiconductor chip (20) having first through-silicon vias, the second-layer of the semiconductor chip (30) having second through-silicon vias at positions corresponding to the first through-silicon vias. The flip-chip bonding apparatus (500) includes: a double-view camera (16) configured to take images of thechips (20) and (30); and a control unit (50) having a relative-position detection program (53) for detecting relative positions of the first-layer of the semiconductor chip (20) and the second-layer of the semiconductor chip (30) that are stacked and bonded based on an image of the first through-silicon vias on a surface of the first-layer of the semiconductor chip (20) taken by the double-view camera (16) before stacked bonding, and an image of the second through-silicon vias on a surface of the second-layer of the semiconductor chip (30) taken by the double-view camera (16) after stacked bonding. This provides accurate connection between through-silicon vias using a simple method. | ||||||
| 48 | ASSEMBLY PROCESS OF TWO SUBSTRATES | US14947254 | 2015-11-20 | US20160152017A1 | 2016-06-02 | Didier Landru; Capucine Delage; Franck Fournel; Elodie Beche |
| A method for assembling two substrates by molecular adhesion comprises: a first step (a) of putting first and second substrates in close contact in order to form an assembly having an assembly interface; a second step (b) of reinforcing the degree of adhesion of the assembly beyond a threshold adhesion value at which water is no longer able to diffuse along the assembly interface. The method also comprises a step (c) of anhydrous treatment of the first and second substrates in a treatment atmosphere having a dew point below −10° C., and control of the dew point of a working atmosphere to which the first and second substrates are exposed from the anhydrous treatment step (c) until the end of the second step (b) so as to limit or prevent the appearance of bonding defects at the assembly interface. | ||||||
| 49 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD | US14821496 | 2015-08-07 | US20150348818A1 | 2015-12-03 | Masaaki TACHIOKA; Tsunehiro NAKAJIMA |
| Provided is a semiconductor device manufacturing method that includes joining a support substrate to a back side of a semiconductor wafer across a ceramic adhesive layer and a mask, to form a joined body. The method further includes forming a functional structure on a front side of the semiconductor wafer. The method further includes detaching the support substrate from the semiconductor wafer by removing the ceramic adhesive layer and the mask. The method further includes a back side processing step of carrying out back side processing on the back side of the semiconductor wafer. | ||||||
| 50 | LIQUID EJECTION HEAD AND METHOD OF MANUFACTURING THE SAME | US14706857 | 2015-05-07 | US20150321475A1 | 2015-11-12 | Junji Tatsumi; Genji Inada; Sayaka Seki; Yuichiro Akama |
| A liquid ejection head includes a recording element substrate that ejects liquid, and an element-substrate support member to which the recording element substrate is bonded with an adhesive. A groove to be filled with the adhesive is provided in a bonding region of the element-substrate support member, at which the element-substrate support member and the recording element substrate are bonded together, along a part or an entirety of the outer circumference of the recording element substrate. | ||||||
| 51 | METHOD OF MANUFACTURING A DEVICE | US14425407 | 2013-09-09 | US20150206853A1 | 2015-07-23 | Hideki Matsushita; Masanobu Kitada |
| Provided is a device in which the metal content existing in a joining interface is controlled. A manufacturing method for the device comprises: a step in which the surfaces of a first substrate and a second substrate are activated using a FAB gun; a step in which a plurality of metals are discharged by using the FAB gun to sputter a discharged metal body comprising the plurality of metals, and the plurality of metals are affixed to the surfaces of the first substrate and the second substrate; a step in which the first substrate and the second substrate are joined at room temperature; and a step in which heating is performed at a temperature that is high in comparison to the agglomeration start temperature of the plurality of metals and of the elements that constitute the first substrate or the second substrate. With regards to the step in which the plurality of metals are affixed, the density of the plurality of metals existing on the joining interface of the first substrate and the second substrate is set to 1×1012/cm2 or less by adjusting the exposure area of the discharged metal body. | ||||||
| 52 | BONDING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | US14561572 | 2014-12-05 | US20150087083A1 | 2015-03-26 | Daisuke TANI; Koichi TAKAHASHI |
| Provided is a flip-chip bonding apparatus (500) capable of stacking and bonding a second-layer of the semiconductor chip (30) onto a first-layer of the semiconductor chip (20) having first through-silicon vias, the second-layer of the semiconductor chip (30) having second through-silicon vias at positions corresponding to the first through-silicon vias. The flip-chip bonding apparatus (500) includes: a double-view camera (16) configured to take images of thechips (20) and (30); and a control unit (50) having a relative-position detection program (53) for detecting relative positions of the first-layer of the semiconductor chip (20) and the second-layer of the semiconductor chip (30) that are stacked and bonded based on an image of the first through-silicon vias on a surface of the first-layer of the semiconductor chip (20) taken by the double-view camera (16) before stacked bonding, and an image of the second through-silicon vias on a surface of the second-layer of the semiconductor chip (30) taken by the double-view camera (16) after stacked bonding. This provides accurate connection between through-silicon vias using a simple method. | ||||||
| 53 | COMPOSITE SUBSTRATE | EP15752195 | 2015-02-16 | EP3109893A4 | 2017-09-27 | KAWAI MAKOTO; KONISHI SHIGERU |
| This composite substrate has a single-crystal semiconductor thin film (13) provided to at least the front surface of an inorganic insulating sintered-body substrate (11) having a thermal conductivity of at least 5 W/m·K and a volume resistivity of at least 1×10 8 ©·cm. The composite substrate also has, provided between the inorganic insulating sintered-body substrate (11) and the single-crystal semiconductor thin film (13), a silicon coating layer (12) comprising polycrystalline silicon or amorphous silicon. As a result of the present invention, metal impurity contamination from the sintered body can be inhibited, even in a composite substrate in which a single-crystal silicon thin film is provided upon an inexpensive ceramic sintered body which is opaque with respect to visible light, which exhibits an excellent thermal conductivity, and which further exhibits little loss at a high frequency range, and characteristics can be improved. | ||||||
| 54 | MANUFACTURING METHOD FOR DEVICE | EP13835803 | 2013-09-09 | EP2894659A4 | 2016-07-13 | MATSUSHITA HIDEKI; KITADA MASANOBU |
| 55 | BONDING DEVICE AND METHOD FOR MANUFACTURING BONDED SUBSTRATE | EP14773789 | 2014-03-20 | EP2980830A4 | 2016-05-11 | HAYASHI KONOSUKE; MATSUSHIMA DAISUKE |
| 56 | MANUFACTURING METHOD FOR DEVICE | EP13835803.1 | 2013-09-09 | EP2894659A1 | 2015-07-15 | MATSUSHITA, Hideki; KITADA, Masanobu |
Provided is a device in which the metal content existing in a joining interface is controlled. A manufacturing method for the device comprises: a step in which the surfaces of a first substrate and a second substrate are activated using a FAB gun; a step in which a plurality of metals are discharged by using the FAB gun to sputter a discharged metal body comprising the plurality of metals, and the plurality of metals are affixed to the surfaces of the first substrate and the second substrate; a step in which the first substrate and the second substrate are joined at room temperature; and a step in which heating is performed at a temperature that is high in comparison to the agglomeration start temperature of the plurality of metals and of the elements that constitute the first substrate or the second substrate. With regards to the step in which the plurality of metals are affixed, the density of the plurality of metals existing on the joining interface of the first substrate and the second substrate is set to 1×1012/cm2 or less by adjusting the exposure area of the discharged metal body. |
||||||
| 57 | COMPOSITE SUBSTRATE | EP15752195.6 | 2015-02-16 | EP3109893A1 | 2016-12-28 | KAWAI Makoto; KONISHI Shigeru |
This composite substrate has a single-crystal semiconductor thin film (13) provided to at least the front surface of an inorganic insulating sintered-body substrate (11) having a thermal conductivity of at least 5 W/m·K and a volume resistivity of at least 1×108 Ω·cm. The composite substrate also has, provided between the inorganic insulating sintered-body substrate (11) and the single-crystal semiconductor thin film (13), a silicon coating layer (12) comprising polycrystalline silicon or amorphous silicon. As a result of the present invention, metal impurity contamination from the sintered body can be inhibited, even in a composite substrate in which a single-crystal silicon thin film is provided upon an inexpensive ceramic sintered body which is opaque with respect to visible light, which exhibits an excellent thermal conductivity, and which further exhibits little loss at a high frequency range, and characteristics can be improved. |
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| 58 | QUANTUM DOT FILMS, LIGHTING DEVICES, AND LIGHTING METHODS | EP11839257 | 2011-11-02 | EP2638321A4 | 2014-05-07 | DUBROW ROBERT S; FREEMAN WILLIAM P; LEE ERNEST; FURUTA PAUL |
| Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices. | ||||||
| 59 | QUANTUM DOT FILMS, LIGHTING DEVICES, AND LIGHTING METHODS | EP11839257.0 | 2011-11-02 | EP2638321A1 | 2013-09-18 | DUBROW, Robert S.; FREEMAN, William P.; LEE, Ernest; FURUTA, Paul |
| Light-emitting quantum dot films, quantum dot lighting devices, and quantum dot-based backlight units are provided. Related compositions, components, and methods are also described. Improved quantum dot encapsulation and matrix materials are provided. Quantum dot films with protective barriers are described. High-efficiency, high brightness, and high-color purity quantum dot-based lighting devices are also included, as well as methods for improving efficiency and optical characteristics in quantum dot-based lighting devices. | ||||||
| 60 | 常温接合装置 | JP2014006869 | 2014-01-17 | JP6125443B2 | 2017-05-10 | 木ノ内 雅人; 後藤 崇之; 津野 武志; 井手 健介; 鈴木 毅典 |
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