| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 101 | Two-way amplifier | JP15765277 | 1977-12-27 | JPS5489412A | 1979-07-16 | FUJIYOSHI KAZUYOSHI; MURAKAMI TAKAHARU |
| PURPOSE:To simplify constitution by providing two transistors and setting the product of respective amplification factors of both transistors below ''1''. CONSTITUTION:Signals inputted from terminal 5 are amplified by transistor Tr1 and are outputted from terminal 6, and signals inputted from terminal 6 are amplified by Tr2 and are outputted from terminal 5. Though Tr2 becomes a feedback circuit to Tr1, oscillation is prevented because the product of respective amplification factors of Tr1 and 2 is set below ''1''. Then, since terminal 6 is connected to the collector of Tr1, the impedance of terminal 6 is sufficiently high, and the input signal level can be prevented from being lowered in case that terminal 6 is an input terminal | ||||||
| 102 | Two-way amplifier | JP15247075 | 1975-12-20 | JPS5275912A | 1977-06-25 | SUGIMOTO AKIHISA |
| PURPOSE:To ensure performance of two-way amplification with use of one unit of negative impedance converter. | ||||||
| 103 | Two-way transmission system | JP12530875 | 1975-10-20 | JPS5249716A | 1977-04-21 | TANIGUCHI HIKARI |
| PURPOSE:The two-way transmission is carried by actuating input-output switching relay of repeater form transmission and receiving terminals. Thus, simplification is ensured for two-way transmission system. | ||||||
| 104 | 양방향 증폭 장치 | KR1020090065518 | 2009-07-17 | KR1020110007862A | 2011-01-25 | 전계익; 김정근 |
| PURPOSE: An apparatus for amplifying bi-directionally is provided to separate forward impedance circuit from a forward amplification unit or an inverse impedance circuit from an inverse amplification unit by using a forward separation unit or a reverse separation unit. CONSTITUTION: A forward amplification part(1300) amplifies an electric signal inputted through a forward port. A forward impedance part(1100) is composed of a forward inductor and a forward resistor. A reverse amplification part amplifies an electric signal inputted through a reverse port. A reverse impedance part(1400) is composed of a reverse inductor and a reverse resistor. A forward separate unit(1200) is arranged between the forward amplification part and the forward impedance part. The reverse separate unit is arranged between the reverse amplification part and reverse impedance part. | ||||||
| 105 | 이단계 양방향 증폭 장치 | KR1020090065516 | 2009-07-17 | KR1020110007860A | 2011-01-25 | 전계익; 김정근 |
| PURPOSE: An apparatus for amplifying two stage bi-directionally is provided to efficiently increase bandwidth by performing amplification and impedance matching according to the usage of an input terminal and an output terminal. CONSTITUTION: A two-step bidirectional amplifier arrangement comprises a first inductor, a first impedance regulator(110), and a first two-way control part(120). The two-step bidirectional amplifier includes a first current source, a forward amplification part, and a second inductor. The two-step bidirectional amplifier comprises a second impedance regulator(210), a forward separate unit(220), and a third inductor. The two-step bidirectional amplifier comprises a third impedance regulator(410), a second two-way control part(420), and a second current source. The two-step bidirectional amplifier comprises a reverse amplification part(330), a fourth inductor, a fourth impedance regulator(310), and a reverse separate unit(320). | ||||||
| 106 | 제어신호 양방향 증폭전송 회로 | KR1020040043481 | 2004-06-14 | KR1020050118372A | 2005-12-19 | 한대현; 김준호 |
| 본 발명은 회의용 시스템의 접속유닛들을 제어하는 제어신호를 전송하는 제어신호 전송회로에 관한 것으로서, 특히 다수의 유닛들이 병렬 접속된 회의용 시스템에서 접속유닛들의 동작을 제어하는 제어신호를 신호전송케이블의 단일 제어신호 라인을 통하여 양방향으로 증폭 및 전송할 수 있도록 함으로써, 제어신호의 감쇄를 방지하여 병렬 접속된 다수의 접속 유닛들을 정확하게 제어할 수 있으며, 단일 신호전송케이블을 이용하여 병렬 접속된 다수의 접속 유닛들을 양방향에서 정확하게 제어할 수 있는 회의용 시스템을 용이하게 구축할 수 있는 제어신호 양방향 증폭전송 회로를 제공한다. | ||||||
| 107 | 쌍방향 증폭기 | KR1019830000717 | 1983-02-22 | KR1019840003936A | 1984-10-04 | 사사노나까미찌 |
| 내용없음 | ||||||
| 108 | LOW NOISE AMPLIFIER MODULE WITH OUTPUT COUPLER | EP16716805.3 | 2016-04-08 | EP3292629A1 | 2018-03-14 | LEUNG, Lai Kan; WANG, Kevin Hsi Huai; PAN, Dongling; NARATHONG, Chiewcharn |
| An amplifier module with an output coupler is disclosed. The amplifier module may include a plurality of input terminals and two or more output terminals. Each input terminal may be coupled to an input of an independent amplifier. Outputs from the independent amplifiers may be coupled to the two or more output terminals. The amplifier module may include an output coupler to couple the two or more output terminals together. A signal may be received by a first output terminal and be coupled by the output coupler to a second output terminal. In some embodiments, when the two or more output terminals are coupled together, the independent amplifiers may be made inactive or operated in a minimum gain configuration. | ||||||
| 109 | AMPLIFIER DEVICE | EP14825356.0 | 2014-12-24 | EP3108652A1 | 2016-12-28 | ARIESEN, Jan; BOSKALJON, Gerrit; RIJSSEMUS, Martien |
| There is provided an amplifier device (30) for a CATV network comprising a first amplifier element (38) for upstream signals and a second amplifier element (36) for downstream signals, wherein the first and second amplifier elements (38, 36) are disposed between first and second directional couplers (34, 32). The combined isolation of the first and second directional couplers (34, 32) is greater than the sum of the gain of the first and second amplifier elements (38, 36). The first directional coupler (34) has one port (40) attached to an input (42) of the downstream amplification element (36) and one port (44) attached to an output (46) of an upstream amplification element (38) and the second directional coupler (32) has one port (150) attached to an output (52) of the downstream amplifier (36) and one port (54) attached to an input (56) of the upstream amplifier (38). | ||||||
| 110 | Disturbance protection for a telecommunications device | EP05102325.7 | 2005-03-23 | EP1580880B1 | 2016-10-12 | Rintalaulaja, Mika; Nurminen, Mikko; Ranta, Jouko |
| 111 | BUFFER AMPLIFIER CIRCUIT | EP14768045 | 2014-03-14 | EP2974008A4 | 2016-09-07 | LEE HAE-SEUNG |
| The invention relates to a discrete-time amplifier circuit (300) operable in a sampling phase and an amplification phase. The amplifier circuit comprises a plurality of switches (S1, S2); a first capacitor (C1) having a first terminal and a second terminal; a second capacitor (C2) having a first terminal and a second terminal; and a first buffer amplifier (BA) having a voltage gain equal to 1-ε, where ε<<1, the first buffer amplifier having an input terminal (301) and an output terminal (302). During the sampling phase, the plurality of switches are configured to couple a first input voltage (VIN) to the first terminal of the first capacitor and a second input voltage (VREF) to the first terminal of the second capacitor. Further, during the amplification phase, the plurality of switches are configured to couple the first terminals of the first and the second capacitors to the input terminal of the first buffer amplifier and the second terminals of the first and second capacitors to the output terminal of the first buffer amplifier. | ||||||
| 112 | SWITCH-LESS BIDIRECTIONAL AMPLIFIER | EP06784123.9 | 2006-08-28 | EP2062350B1 | 2012-01-04 | BERG, Håkan; THIESIES, Heiko |
| A bi-directional amplifier, transceiver, integrated circuit, mobile unit, telecommunication infrastructure for amplification of signals received or signals to be transmitted in a communication circuit and a method for bi-directional amplification comprising amplifying signals in a bi-directional amplifier and directing a signal between two or more different paths comprising at least one first biased semiconductor amplification element (230, 340, 450, 550) connected to a at least one first impedance matching network (210, 310, 410, 510), at least one second biased semiconductor amplification element (240, 350, 460, 560) connected to a second impedance matching network (220, 330, 430, 530), a first device for biasing the at least one first biased semiconductor amplification element and a second device for biasing the at least one second biased semiconductor amplification element where the direction of signal amplification in said bi-directional amplifier is controlled by the first or second device for biasing the at least one first (230, 340, 450, 550) or second (240, 350, 460, 560) biased semiconductor amplification element. | ||||||
| 113 | Asymmetric, voltage optimized, wideband common-gate bi-directional mmic amplifier | EP03011128.0 | 2003-05-22 | EP1376862B1 | 2008-01-02 | Yang, Jeffrey M.; Chung, Yun-Ho; Nishimoto, Matt Y. |
| 114 | Asymmetric, optimized common-source bi-directional amplifier | EP03026033.5 | 2003-11-12 | EP1505726A1 | 2005-02-09 | Yang, Jeffrey M.; Nishimoto, Matt; Chung, Yun-Ho; Battung, Michael; Lai, Richard |
A microwave common source bi-directional amplifier includes a first amplification path and a second amplification path wherein the signal directional flow is controlled through selective biasing. During a receive mode, a receiver amplifier directionally couples a signal from a second port to a first port during a receive mode, and the transmitter amplifier is biased off during that mode. During the transmit mode the transmitter amplifier directionally couples a signal between the first port and the second port, and the receiver amplifier is off during that mode. |
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| 115 | Asymmetric, voltage optimized, wideband common-gate bi-directional mmic amplifier | EP03011128.0 | 2003-05-22 | EP1376862A3 | 2005-02-09 | Yang, Jeffrey M.; Chung, Yun-Ho; Nishimoto, Matt Y. |
A bi-directional amplifier (10) for a transceiver module for amplifying both transmit signals and receive signals propagating in opposite directions. The amplifier (10) includes first and second common gate FETs (22, 24) electrically coupled along a common transmission line (20). A first variable matching network (28) is electrically coupled to the transmission line (20) between a transmit signal input port (12) and the first FET (22), and a second variable matching network (30) is electrically coupled to the transmission line (20) between a receive signal input port (14) and the second FET (24). An interstage variable matching network (32) is electrically coupled to the transmission line (20) between the first and second FETs (22, 24). A DC voltage regulator (34) provides a DC bias signal to the matching networks (28, 30, 32) and the FETs (22, 24) so that different signal amplifications and different impedance matching characteristics can be provided for the transmit signal and the receive signal. |
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| 116 | SEMICONDUCTOR AMPLIFIER CIRCUIT AND SYSTEM | EP99926957.4 | 1999-07-06 | EP1096669A2 | 2001-05-02 | HAYASHI, Joji; KIMURA, Hiroshi |
The present invention has an objective of providing a semiconductor amplifier circuit having a cascode amplifier in which a negative characteristic of an output conductance is improved at least in a particular frequency band. A semiconductor amplifier 1 includes a cascode amplifier 500 having a transistor 101 and a transistor 102 which are cascaded, and improvement means for improving the negative characteristic of the output conductance GOUT of the cascode amplifier 500 at least in a particular frequency band. |
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| 117 | Wideband CATV amplifier with microprocessor-based slope and gain control | EP98310811.9 | 1998-12-31 | EP0928063A2 | 1999-07-07 | Blount, Richard J., Jr.; Underkofler, Leon M. |
A broadband amplifier has a microcontroller (20) having tables the entries of which correspond to desired variable slope and gain characteristics of the amplifier. The entries in the tables are derived from known temperature characteristics of a specific amplifier/cable combination; multiple tables are used to support multiple different configurations. The microcontroller (20) retrieves values from the tables based on temperature data supplied thereto via a serial bus; these values are output to digital-to- analog converters which generate slope and gain control signals to control slope and gain compensation circuits in a PIN diode attenuator in the amplifier. |
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| 118 | Transmission control circuit for use in TDMA communication device | EP93119551.5 | 1993-12-03 | EP0600515A2 | 1994-06-08 | Tanemura, Takeshi |
A transmission control circuit for use in a TDMA communication device controls the rise and fall characteristics of driving voltages applied to high-frequency amplifier circuits in such a way that the generation of unnecessary waves at the time of transmission can be restrained to a minimum, wherein a driving voltage ON/OFF circuit B1 outputs first and second driving voltages S1 and S2 having different rise and fall time constants, the first driving voltage S1 being supplied to a first high-frequency amplifier circuit A1, and the second driving voltage S2 to a second high-frequency amplifier circuit. The requisite rise time for the driving voltage S1, which is supplied to the first high-frequency amplifier circuit A1, is longer than the requisite rise time for the ON/OFF switching signal S2, supplied to the second high-frequency amplifier circuit A2, and the requisite fall time for the driving voltage S1 is shorter than the requisite fall time for the second ON/OFF switching signal S2, which is supplied to the second high-frequency amplifier circuit A2. |
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| 119 | Wechselspannungsverstärkerschaltung mit mehreren in Gate-(Basis-)Schaltung betriebenen Halbleiterverstärkerelementen | EP80102139.5 | 1980-04-21 | EP0018571A1 | 1980-11-12 | Ritter, Gerhard, Dipl.-Ing. |
In einer Halbleiterverstärkerschaltung mit umschaltbarer Verstärkungsrichtung sind parallel zueinander wenigstens zwei Halbleiterverstärkerelemente (Tv, TL) vorgesehen, von denen das eine Halbleiterverstärkerelement (Tv) in beiden Verstärkungsrichtungen wirksam sein kann, während das andere Halbleiterverstärkere!ement (TL) und gegebenenfalls weitere Halbleiterverstärkerelemente jeweils bei Umschaltung der Verstärkungsrichtung zu- bzw. abschaltbar ist (sind). Zumindest das genannte eine Halbleiterverstärkerelement (Tv) ist durch einen Feldeffekttransistor gebildet; das andere Halbleiterverstärkerelement (TL) und gegebenenfalls auch die weiteren Halbleiterverstärkerelemente können auch durch bipolare Transistoren gebildet sein. Die Transistoren können auf einem Chip integriert oder in einem gemeinsamen Gehäuse zusammengefaßt sein. Die Verstärkerschaltung kann in der einen Richtung (B-A) als Leistungsverstärker, in der anderen Richtung (A-B) als Eingangsverstärker dienen. Mehrere Verstärkerschaltungen können zu einem mehrstufigen Verstärker verbunden sein. Zur Betriebswiderstandsanpassung können Anpassungsvierpole (VP) vorgesehen sein. Ein im momentanen Betriebszustand nicht benötigter Verstärkerzweig kann von dem in Betrieb befindlichen Verstärkerzweig abgeriegelt sein; die beiden Schaltungszweige können auch durch eine Frequenzwaicheausammengeführt sein. |
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| 120 | MINATURE BIDIRECTIONAL AMPLIFIER | PCT/US2005015100 | 2005-05-02 | WO2005107398A3 | 2007-04-05 | HE SHIPING; HANG JIE; GE DAVID; JAMAL MOHAMMED N |
| An amplifier device for amplifying RF communication signals compatible with IEEE 802.11 standards (100). An amplifier circuit is housed within a cylindrical metal housing that provides excellent heat dissipation and requires no mounting hardware for installing the device within a communication system (10). The metal housing with an integrated lightning arrestor creates a watertight seal to protect the amplifier circuit from damage when installed outdoors and the amplifier circuit is compatible with both 2.4 GHz and 5.8 GHz frequency applications. | ||||||
