| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 81 | Transistor-type amplifier circuit for the production of output signals having a peak-to-peak amplitude larger than the breakdown voltage of the transistors | US3774117D | 1971-06-01 | US3774117A | 1973-11-20 | KOVACS A |
| A transistor type amplifier is provided in which the maximum signal applied is greater than the breakdown voltage of the individual transistors in the circuit. An additional transistor is connected in between the load resistor of a first externally controlled transistor and the externally controlled transistor. The base of the additional transistor is connected to a point in a voltage divider, which divider is connected between a point of constant potential and the collector of the additional resistor.
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| 82 | High voltage operational amplifier | US3737800D | 1970-06-15 | US3737800A | 1973-06-05 | RUSSELL R; SOLOMON J |
| A monolithic operational amplifier is disclosed suitable for high voltage operation including an input transistor protection capability under large signal swing and a negative short circuit limit function. Another feature includes an internal current regulator and a protection circuit for circuit turn on.
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| 83 | Linear amplifier circuit | US3678404D | 1970-06-08 | US3678404A | 1972-07-18 | BLOM DIRK; OVERBEEK ADRIANUS JOHANNES WIL; ZWIJSEN WILHELMUS ANTONIUS JOS |
| A linear amplifier circuit comprising two stages; each stage further comprising two transistors traversed in series by the same current. Cross coupling between the two stages avoid deviations from linearity of the amplifier due to differences in the base-emitter voltages of the transistors. The circuit is suitable for use in integrated circuits.
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| 84 | Integrated video amplifier | US3668540D | 1970-07-13 | US3668540A | 1972-06-06 | CAMENZIND HANS R |
| Integrated video amplifier having an output voltage which is accurately held to one-half of the supply voltage and which utilizes a class B output stage.
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| 85 | High voltage transistor circuit | US3501712D | 1967-05-17 | US3501712A | 1970-03-17 | LEE JAMES S |
| 86 | Solid state audio driver circuit | US3484709D | 1966-06-13 | US3484709A | 1969-12-16 | KABRICK WALLACE J |
| 87 | Signal translating system | US3421098D | 1965-07-19 | US3421098A | 1969-01-07 | FISHER MICHAEL S |
| 88 | Amplifying arrangement having two transistors | US46528565 | 1965-06-21 | US3384830A | 1968-05-21 | DE NIET EDMOND |
| 89 | Transistor power amplifiers | US27001163 | 1963-04-02 | US3281535A | 1966-10-25 | REIFFIN MARTIN G |
| 90 | High voltage d.c. coupled differential amplifier including series energized transistors | US32608163 | 1963-11-26 | US3275944A | 1966-09-27 | LAVIN THOMAS J |
| 91 | Series transistor circuit with selectively coupled stages | US34812164 | 1964-02-28 | US3274505A | 1966-09-20 | ARNOLD FRISCH; WEISS LAWRENCE H; MORRIS ENGELSON |
| 92 | High voltage cascaded semiconductor amplifier including feedback and protective means | US32437363 | 1963-11-18 | US3259848A | 1966-07-05 | RADO JOHN A |
| 93 | Transistor converter circuit utilizing direct coupled series transistors | US80632259 | 1959-04-14 | US3040269A | 1962-06-19 | HEMPHILL ALFRED A; TEWKSBURY JOHN M |
| 94 | Circuit arrangement employing transistors | US74603158 | 1958-07-01 | US3024422A | 1962-03-06 | ERIC JANSSON LEONARD |
| 95 | Transistor tone generator and power amplifier | US79265059 | 1959-02-11 | US2994833A | 1961-08-01 | CEROFOLINI GABRIELE F |
| 96 | Series-energized transistor amplifier | US54374155 | 1955-10-31 | US2943267A | 1960-06-28 | DOMINICK RANDISE |
| 97 | Series energized cascaded transistor amplifier | US41768254 | 1954-03-22 | US2926307A | 1960-02-23 | EHRET ROBERT J |
| 98 | Cascode amplifier | JP28815698 | 1998-10-09 | JP2000124742A | 2000-04-28 | MICHAEL G ADLERSTEIN; MARK P ZAITORIN |
| PROBLEM TO BE SOLVED: To provide a cascode amplifier formed as an integrated circuit on a III-V substrate. SOLUTION: A substrate 40 is provided with a pair of thin and long active areas and formed along a pair of the active areas separated in a horizontal direction provided on one surface of the substrate. In the respective active areas, a plurality of electrically interconnected transistor cells are formed inside. The transistor cell 24 inside a first active area is interconnected to common emitter constitution and the plurality of transistor cells 28 inside a second active area are interconnected to common base constitution. A plurality of first resistors 26 are arranged on the surface of the substrate, the respective resistors are constituted so as to connect the first electrode to a ground potential and the second electrode is connected to the emitter area of a pair of corresponding adjacent transistor cells formed inside the first area. | ||||||
| 99 | JPS5911282B2 - | JP10029175 | 1975-08-19 | JPS5911282B2 | 1984-03-14 | MOTOMYA MASAYUKI; TOKUHARA MASAHARU; KAWAKAMI HIROMI |
| 100 | High voltage circuit in low voltage c-mos process | JP7838183 | 1983-05-06 | JPS58202563A | 1983-11-25 | AREN AARU BAAROO; KOREI PIITAASON |
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