181 |
Gas rate sensor |
JP539688 |
1988-01-13 |
JPH0614063B2 |
1994-02-23 |
TAKAHASHI TSUNEO; NISHIO TOMOYUKI; IKEGAMI MASAYUKI; GUNJI TAKAHIRO |
|
182 |
Semiconductor gas flow sensor |
JP29394891 |
1991-08-21 |
JPH0552863A |
1993-03-02 |
HOSOI TAKASHI; HIROSE YOSHITSUGU; YAMAKAWA HIROSHI |
PURPOSE: To enable the joining of a semiconductor substrate without adversely affecting a thermal resistance element by a method wherein a film is formed from a soldering material made of a heterogeneous metal which is transformed to an alloy at a low heating temperature to be heated under a pressurized condition.
CONSTITUTION: A film is formed by evaporation of titanium Ti as jointing base material on joining surfaces of semiconductor substrates 1 and 2. A film is formed on the side of the substrate 1 by evaporation of gold Au as soldering material while a film is formed on the side of the substrate 2 by evaporation of tin Sn as soldering material. Then, the substrate 1 and 2 are put one upon the other to be heated at 250-400°C being pressurized with a weight thereon and the alloying of the soldering material proceeds uniformly to achieve a joining of the substrate 1 and 2 firmly and well closely with airtightness. In the heating of the soldering material to alloy, this enables the proceeding with the alloying at a lower temperature than the melting point of a monomer material to allow a low temperature heating thereby eliminating degrading in thermal resistance characteristic of heat wires 51 and 52 otherwise caused by the heating.
COPYRIGHT: (C)1993,JPO&Japio |
183 |
Gas rate sensor |
JP24529691 |
1991-06-19 |
JPH04370767A |
1992-12-24 |
HOSOI TAKASHI; DOI MIZUHO; NISHIO TOMOYUKI; HIYAMA SATOSHI |
PURPOSE:To enable a structure to be reinforce, a machining man-hour to be reduced for saving labor, and a productivity to be improved by forming a groove which is used as a gas passage at one semiconductor substrate and performing pattern-formation of only a pair of heat wires at the other semiconductor substrate. CONSTITUTION:A lower-side semiconductor substrate 1 where only a pair of heat wires 51 and 52 are subjected to pattern-formation and an upper-side semiconductor substrate 2 where a groove 40 which is used as a gas passage 40 is subjected to etching-formation are adhered overlappingly so that the wires 51 and 52 are placed in the passage 4, thus constituting a sensor body. In this manner, since the groove 40 is formed only at the substrate 2, a machining man-hour is reduced and at the same time a time for an alignment can be saved when the substrate 1 is jointed to the substrate 2 to form the passage 4, thus enabling productivity to be improved. |
184 |
Photoelectric motion/liquid flow sensor |
JP19782391 |
1991-08-07 |
JPH04340470A |
1992-11-26 |
JIEEMUSU JII SUMOORU |
PURPOSE: To obtain a low cost sensor for measuring rotational and linear motion. CONSTITUTION: The sensor 10 comprises light sources 24, 26 and photosensors 28, 30 arranged oppositely to a liquid passage 12a. An elastic member is supported firmly at one end thereof and placed in a liquid 14 in order to vary the quantity of light impinging on the photosensors 28, 30 from the light sources 24, 26 as a function of the amount of bending caused by the movement of the liquid 14 in the liquid passage 12a. The elastic member may be an optical fiber 18, 20 for transmitting the light from the light sources 24, 26 toward the photosensors 28, 30. Alternatively, the elastic member may be a curtain for intercepting transmission of the light from the light sources 24, 26 toward the photosensors 28, 30. The liquid passage 12a is defined by a container 12 filled with the liquid 14. The sensor 10 is constituted to sense the rotational or linear motion of the container 12 with respect to the liquid 14. |
185 |
JPH04506571A - |
JP50976190 |
1990-07-05 |
JPH04506571A |
1992-11-12 |
|
|
186 |
Gyro apparatus using semiconductor |
JP27935590 |
1990-10-19 |
JPH04157327A |
1992-05-29 |
KUMAGAI HIDEO; SHIOZAWA TATSUO |
PURPOSE: To simplify the constitution of a device and to miniaturize the device by detecting a Coriolis force acting to the flow of electrons inside a semiconductor when the angular velocity is impressed to the semiconductor with the use of a voltage detecting means.
CONSTITUTION: A current impressing means 23 is connected between a first and a second electrodes 21 and 22 of a semiconductor 20 formed of a Hall device so as to impress a predetermined current I. A voltage detecting means 26 for detecting the voltage is provided between a third and a fourth electrodes 24 and 25 of the semiconductor 20 via a lead wire 27. When a uniform current, I
x is impressed between the electrodes 21 and 22, the flow of electrons A and the line of the equal potential B are such as indicated by a solid line and a chain line, respectively. The Hall effect when an eternal magnetism B
z is applied is F=Qψ×B
z (wherein ψ is the velocity of electrons and Q is the electric charge). When the Coriolis force acts to the flow of the electrons as a result of the application of the angular velocity, the Hall effect, becomes F=-2mψ×ω (wherein ω is the angular velocity and (m) is the mass of electrons). Accordingly, a voltage can be generated when the angular velocity is added.
COPYRIGHT: (C)1992,JPO&Japio |
187 |
JPH0424663B2 - |
JP13229581 |
1981-08-24 |
JPH0424663B2 |
1992-04-27 |
TAKAHASHI FUMITAKA; TAGAMI KATSUTOSHI; OKADA YASUSHI |
|
188 |
JPH0324630B2 - |
JP17382082 |
1982-10-01 |
JPH0324630B2 |
1991-04-03 |
KAARU MAKARUEI FUERAA |
|
189 |
Angular speed sensor for fluid |
JP2652189 |
1989-02-03 |
JPH01316665A |
1989-12-21 |
MARIO TOOMASU ROPITSUKORO; RICHIYAADO ERISU SUWATSUTSU |
PURPOSE: To obtain a stabilized speed profile of gas flow while suppressing generation of turbulence by employing a nozzle having parallel plane for determining the speed profile of gas flow.
CONSTITUTION: When AC power is fed to a piezoelectric diaphragm, the diaphragm oscillates to generate a fluid pressure pulsation in a pump chamber defined in a supporting member 74. Consequently, the fluid is pressurized through an orifice 72 to concentrate the hydraulic pressure in a drain chamber 52. The chamber 52 discharges the fluid through a supply port 25, a manifold chamber 24 and a fluid supply pipe 26 into inlet manifold chamber 27 thence into a nozzle 28. The cubic feet/min(CFM) current velocity of fluid depends on the dimensions and profile of pump chamber. Fluid velocity Vp in a jet chamber 29 depends on the cross-sectional area (A) of nozzle.
COPYRIGHT: (C)1989,JPO |
190 |
JPH0155421B2 - |
JP13223981 |
1981-08-24 |
JPH0155421B2 |
1989-11-24 |
TAKAHASHI FUMITAKA; TAGAMI KATSUTOSHI; OKADA YASUSHI; OBARA HIFUMI |
|
191 |
JPH0155419B2 - |
JP9765581 |
1981-06-24 |
JPH0155419B2 |
1989-11-24 |
OKADA YASUSHI; TAKAHASHI FUMITAKA; TAGAMI KATSUTOSHI |
|
192 |
Gas rate sensor |
JP539488 |
1988-01-13 |
JPH01180458A |
1989-07-18 |
TAKAHASHI TSUNEO; NISHIO TOMOYUKI; IKEGAMI MASAYUKI; GUNJI TAKAHIRO |
PURPOSE: To perform the best temperature correction of a sensor output by calculating the current temperature correction value from a function which indicates variation in preset sensor output with temperature according to the detected gas temperature in the sensor.
CONSTITUTION: The temperature sensor 19 is provided in a sensor main body 18 to detect the gas temperature T in it. Further, the gas temperature T detected by the sensor 19 and the sensor output X are read in and the temperature correction of the current sensor output X is performed by arithmetic processing by using the function f(T, X) showing variation in the preset sensor output X with temperature. Then a temperature correcting circuit 20 generates a corrected sensor output X'.
COPYRIGHT: (C)1989,JPO&Japio |
193 |
Manufacture of gas angular velocity sensor |
JP13601687 |
1987-05-29 |
JPS63298164A |
1988-12-05 |
TAKAHASHI FUMITAKA; OKAZAKI KUNIO; SHIRAISHI MASARU; TAKAHASHI MASAYUKI |
PURPOSE:To achieve a higher detection sensitivity, by removing a gold clad on a hot wire by evaporation after mounted while material of the hot wire is thermally treated at a temperature of recrystallization thereof. CONSTITUTION:After being formed and machined, a detection element 1 is connected to a control power source 3 through a power source wire 2 in such a manner as to be allowed to energize hot wires 14 and mounted in a chamber 4 to be sealed up. An exhauster 5 such as vacuum pump is connected to the chamber 4 and, after the sealing of the detection element 11, the chamber 4 is exhausted to vacuum below 1.5Pa. Then, the power source 3 is actuated to energize the hot wires 14 at a temperature and a time length enough to remove a gold clad on the hot wires 14 by evaporation and a heat treatment is performed. Here, the wires 14 are adjusted to the temperature above 1,500 deg.C if made of tungsten to accomplish a secondary crystallization of the tungsten material. |
194 |
JPS63501245A - |
JP50586786 |
1986-10-20 |
JPS63501245A |
1988-05-12 |
|
|
195 |
JPS6311604B2 - |
JP8931178 |
1978-07-21 |
JPS6311604B2 |
1988-03-15 |
JATSUKU HENRII KURITSUTENDEN; JOSEFU UIRIAMU BITSUTOSON |
|
196 |
Gas rate sensor |
JP87884 |
1984-01-09 |
JPS60144664A |
1985-07-31 |
KATSUNO YASUATSU |
PURPOSE:To heat gss up to set temperature in a short time and improve the precision of angle detection by heating gas which surrounds a temperature sensing element directly by a heater plate. CONSTITUTION:A heater wire 25 is arranged on the outer circumferential surface of a casing 1, and the heater plate 30 is arranged in the casing 1, for example, on the inner surface of a dust plate 11 arranged in front of a nozzle 8. The gas injected from the nozzle 8 contacts the hater plate 30 directly and is therefore heated up to the set temperature in a short time. The heated gas circulates in the casing 1. |
197 |
Strapped-down inertial device |
JP21413483 |
1983-11-16 |
JPS60107517A |
1985-06-13 |
WATABE HIROSHI |
PURPOSE:To simplify structure and reduce its size and weight by fixing respective input axes of three rate integral gyros and three accelerometers in the three axial directions of a body such as an airframe and a sailing body, and detecting its angular velocity and acceleration. CONSTITUTION:When an electrostrictive oscillation pump 19 is driven by an oscillator 26, the filler gas in a casing 17 flows in a layer as shown by an arrow to cool temperature sensing elements 21a and 21b. Then, when angular acceleration is applied, the gas flow is deflected to generate a trifle difference between the amounts of radiation that the temperature sensing elements 21a and 21b receive, and that appears as variation in the resistance value of the temperature sensing elements 21a and 21b. This is converted by a bridge circuit 28 into an electric signal, which is amplified by an amplifier 29 up to a necessary scale factor, thereby obtaining a proper output. |
198 |
Fluid inertia sensor |
JP17775783 |
1983-09-26 |
JPS6069565A |
1985-04-20 |
NAGASAWA AKIRA; YASHIRO KOUJI |
PURPOSE:To simplify structure and reduce manufacture cost by arranging a spherical body which is pivoted rotatably and has large inertial efficiency in a spherical hollow body and flowing fluid. CONSTITUTION:When slightly pressurized fluid is supplied into a fluid input pipe 5, this fluid flows along the circumferential surface of the spherical body 4 as shown by an arrow and is then discharged from a fluid output pipe 6. In this case, the fluid flowing through the upper and lower parts in the spherical body 4 is stationary fluid, so the spherical body 4 holds a fixed state continuously. For example, when an automobile of a system mounting a fluid inertia sensor 1 is turned as shown by an arrow A, the fluid input and output pipes 5 and 6 and spherical hollow body 2 rotate, but the spherical body 4 having the large inertial efficiency holds the fixed state. Then, the fluid becomes unbalanced in flow rate between the upper and lower parts in the spherical body 4 to generate a pressure difference. The pressure difference is detected by pressure sensors 7 and 8 and supplied to a comparator 9. This comparator 9 generates an analog output with the level corresponding to the revolving angular speed. |
199 |
JPS5822982B2 - |
JP7031876 |
1976-06-15 |
JPS5822982B2 |
1983-05-12 |
MARIO TOOMASU ROPIKORO; MATSUKUSU AANORUDO SHEEFUAA; JOOJI ARUFURETSUDO JATSUSHIRA |
|
200 |
Gas jet deflection type angular speed sensor |
JP17382082 |
1982-10-01 |
JPS5871465A |
1983-04-28 |
KAARU MAKARUBUEI FUERAA |
|