| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 121 | AN APPARATUS FOR AND A METHOD OF MANUFACTURING A SINGLE CRYSTAL ROD | EP04708718.4 | 2004-02-06 | EP1595006B1 | 2006-07-12 | JENSEN, Leif; PETERSEN, Jan, Eyving; VABENGARD, Per |
| An apparatus (1) is provided for manufacturing a single crystal rod (2) from a poly crystal feed rod (3), said apparatus (1) comprising a closed chamber (4), at which chamber (4) the feed rod (3) is located, said chamber (4) comprising an annular energy supply (5) arranged around the feed rod (3) for melting off the one end (23) of the rod for providing single crystals, said apparatus comprising first moving means (6) for axial movement of the feed rod (3) and second moving means (7) for a rotating relative movement between the feed rod (3) and the annular energy supply (5). The apparatus (1) comprises a monitoring system (8) for recording the distance between the surface (9) of the feed rod (3), and an annular inwardly radially facing reference face associated with the energy supply (5), and third moving means (10) for regulating the distance. Hereby an apparatus and a method are accomplished that enable use of irregular feed rods that assume other shapes than the optimal cylindrical shape and also enable use of curved cylindrical an elliptical rods with irregular surface. | ||||||
| 122 | AN APPARATUS FOR AND A METHOD OF MANUFACTURING A SINGLE CRYSTAL ROD | EP04708718.4 | 2004-02-06 | EP1595006A1 | 2005-11-16 | JENSEN, Leif; PETERSEN, Jan, Eyving; VABENGARD, Per |
| An apparatus (1) is provided for manufacturing a single crystal rod (2) from a poly crystal feed rod (3), said apparatus (1) comprising a closed chamber (4), at which chamber (4) the feed rod (3) is located, said chamber (4) comprising an annular energy supply (5) arranged around the feed rod (3) for melting off the one end (23) of the rod for providing single crystals, said apparatus comprising first moving means (6) for axial movement of the feed rod (3) and second moving means (7) for a rotating relative movement between the feed rod (3) and the annular energy supply (5). The apparatus (1) comprises a monitoring system (8) for recording the distance between the surface (9) of the feed rod (3), and an annular inwardly radially facing reference face associated with the energy supply (5), and third moving means (10) for regulating the distance. Hereby an apparatus and a method are accomplished that enable use of irregular feed rods that assume other shapes than the optimal cylindrical shape and also enable use of curved cylindrical an elliptical rods with irregular surface. | ||||||
| 123 | Bandförmige Folien aus Metallen, Verfahren und Vorrichtung zu deren Herstellung sowie ihre Verwendung | EP84102995.2 | 1984-03-19 | EP0123863B1 | 1989-01-18 | Schwirtlich, Ingo, Dr.; Woditsch, Peter, Dr. |
| 124 | Verfahren und Vorrichtung zum zonenweisen Erwärmen bzw. Abkühlen länglicher Behandlungskörper | EP81100641.0 | 1981-01-29 | EP0034283A2 | 1981-08-26 | Welter, Jean-Marie, Dr. |
Zonenschmelzverfahren an Formkörpern oder die Herstellung gerichtet erstarrter Formkörper im Durchlaufverfahren, die bislang chargenweise an Einzelkörper vorgenommen wurden, lassen sich gemäß der Erfindung kontinuierlich gestalten, indem man die Formkörper oder gerichtet zu verfestigende Schmelze aufweisende Materialtiegel fortlaufend achsparallel zueinander auf bzw. an einem umlaufenden Band anordnet und durch eine insbesondere horizontale Heiz-oder Kühlzone längs einer zu dieser Zone geneigten Bahn schickt. Eine dafür geeignete Vorrichtung hat zumindest eine längliche Heizzone (39) und ein in der durch die Heizzonenlängsrichtung gehenden Vertikalebene liegendes Transportband (17), dessen Transportrichtung mit der Heizzonenrichtung einen Winkel bildet und das insbesondere Halteelemente zum Einhängen oder Aufnehmen der Formkörper oder Materialtiegel aufweist. |
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| 125 | ゾーン引上げ設備においてシリコンから単結晶ロッドを製造するための装置および方法 | JP2023556833 | 2022-03-01 | JP2024514287A | 2024-04-01 | モース,パトリック |
| ゾーン溶融のための引上げ設備においてシリコンから単結晶ロッドを引上げるための方法およびデバイスは、(1)一方端部に方位溝を含むシリコンの送りロッドを設けるステップと、(2)3つの把持アームを備えた下方部分を取付けるステップとを含み、1つの把持アームは、一方端部が送りロッドの方位溝に嵌合するとともに他方端部が下方部分に回転可能に取付けられるように形成されており、当該方法およびデバイスはさらに、(3)接続要素を含む上方部分に、送りロッドと共に下方部分を懸架させるステップを含み、接続要素は、上方部分と下方部分とが嵌合した状態で径方向に互いに接続されるようにゾーン引上げ設備の引上げシャフトに接続され、上方部分は径方向位置合わせ用要素を含み、3つの長さ調節可能スペーサ要素は、それぞれが把持アームに力を及ぼすことができるように上方部分に取付けられており、当該方法およびデバイスはさらに、(4)溝が位置する端部における送りロッドの回転軸が引上げシャフトの回転軸と一致するように、径方向位置合わせ用要素を移動させるステップと、(5)溝とは反対側の端部における送りロッドの回転軸が引上げシャフトの回転軸と一致するように、長さ調節可能スペーサ要素を設定するステップと、(6)単結晶ロッドの円錐部分を引上げるステップと、(7)単結晶ロッドの円筒部分を引上げるステップとを含む。 | ||||||
| 126 | ＦＺ炉の多結晶原料把持具 | JP2018054160 | 2018-03-22 | JP7013984B2 | 2022-02-01 | 尼ヶ▲崎▼ 晋 |
| 127 | 結晶成長装置、及びこの装置を用いた結晶成長方法 | JP2020081929 | 2020-05-07 | JP6999739B2 | 2022-01-19 | 長澤 亨 |
| 128 | 浮遊帯域溶融装置 | JP2016083600 | 2016-04-19 | JP6669355B2 | 2020-03-18 | 進藤 勇 |
| 129 | 単結晶の製造方法及び単結晶製造装置 | JP2014101244 | 2014-05-15 | JP6233182B2 | 2017-11-22 | 渡邉 一徳; 児玉 義博; 中澤 慶一 |
| 130 | 単結晶の製造方法及び単結晶製造装置 | JP2014101244 | 2014-05-15 | JP2015218076A | 2015-12-07 | 渡邉 一徳; 児玉 義博; 中澤 慶一 |
| 【課題】FZ単結晶製造の際に、有転位化の発生に影響を与え得る浮遊帯域の状態を調整することができる単結晶の製造方法及び単結晶製造装置を提供する。 【解決手段】FZ法による単結晶の製造方法であって、少なくとも、主誘導加熱コイルと、導電性金属からなる副誘導加熱コイルを具備し、副誘導加熱コイルを、主誘導加熱コイルの高周波発振機との接続部とは反対側において、主誘導加熱コイルの原料結晶棒側及び/又は単結晶棒側に設置した単結晶製造装置を準備する工程と、浮遊帯域の形状を観察し、浮遊帯域の状態に応じて原料結晶棒側及び/又は単結晶棒側の副誘導加熱コイルを主誘導加熱コイルに対して前後移動させながら、単結晶棒を育成する工程とを有する単結晶の製造方法。 【選択図】図1 |
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| 131 | シリコン結晶素材及びその製造方法 | JP2013080816 | 2013-04-08 | JP5679361B2 | 2015-03-04 | 慎二 十河; 亮輔 上田 |
| 132 | Silicon crystal material and method for producing the same | JP2013080817 | 2013-04-08 | JP2013139388A | 2013-07-18 | SOGO SHINJI; UEDA RYOSUKE |
| PROBLEM TO BE SOLVED: To provide a silicon crystal material which is produced by the CZ method, used as a raw material rod for producing a silicon single crystal by the FZ method and has a gripped portion that enables loading of the silicon crystal material into a crystal growth furnace employing the FZ method without requiring mechanical processing, and a method for producing the same.SOLUTION: The silicon crystal material is produced by the CZ method and used for producing a silicon single crystal by the FZ method. The silicon crystal material has: a shoulder portion 5 that gradually grows in diameter; a cylindrical straight body 2; a tail portion 6 that gradually reduces in diameter; and a gripped portion 8 that is formed above the shoulder portion 5 or below the tail portion 6, gripped by being hooked by claws of a gripper from the side surface when producing a silicon single crystal by the FZ method, and enables loading of the silicon crystal material into a furnace and growth of a single crystal. The gripped portion 8 is formed in the silicon crystal production process by the CZ method in a similar way as in the shoulder portion 5, the straight body portion 2, and the tail portion 6. | ||||||
| 133 | Single crystal silicon manufacturing equipment | JP2007331547 | 2007-12-25 | JP4894749B2 | 2012-03-14 | 匡毅 伊藤; 孝則 伊藤; 昇 千種 |
| 134 | Apparatus for producing semiconductor single crystal | JP2009091788 | 2009-04-06 | JP2010241635A | 2010-10-28 | ISOBE TAKESHI; UEDA YASUHIRO; KAWABUCHI MITSURU; KAMIZUMA TOSHIFUMI |
| PROBLEM TO BE SOLVED: To provide an apparatus for producing a semiconductor single crystal, the apparatus avoiding complication of the apparatus configuration and appropriately generating a single crystal. SOLUTION: The apparatus A1 for producing a semiconductor single crystal includes a seed crystal holder 5 that has a low-speed mode when the holder moves at a growing speed of a semiconductor single crystal and a high-speed mode when the holder moves at a speed exceeding the growing speed of the semiconductor single crystal. The apparatus further includes: servo motors 71A, 71B respectively connected through a single driving path to the seed crystal holder 5 and a crucible 1; rotary encoders 72A, 72B detecting rotations of the servo motors 71A, 71B, respectively; servo amplifiers 75A, 75B controlling the servo motors 71A, 71B, respectively; and a sequencer 8 that sends a position control command in at least the low-speed mode to the servo amplifiers 75A, 75B. COPYRIGHT: (C)2011,JPO&INPIT | ||||||
| 135 | The method for crystallizing silicon using the mask | JP2002156969 | 2002-05-30 | JP4211967B2 | 2009-01-21 | ユン−ホ ジュン， |
| A sequential lateral solidification mask having a first region with a plurality of first stripes that are separated by a plurality of first slits. The mask further includes a second region having a plurality of second stripes separated by a plurality of second slits. The second stripes are perpendicular to the first stripes. A third region having a plurality of third stripes separated by a plurality of third slits, with the third stripes being transversely arranged relative to the first stripes. A fourth region having a plurality of fourth stripes and a plurality of fourth slits between the fourth stripes, with the fourth stripes being transversely arranged relative to the second stripes. Sequential lateral solidification is performed using the mask by multiple movements of the mask and multiple, overlapping irradiations. | ||||||
| 136 | Fz method single crystal growing apparatus | JP37007199 | 1999-12-27 | JP3758440B2 | 2006-03-22 | 慶一 中澤; 和幸 平原 |
| 137 | Polycrystalline silicon rod holder | JP34198691 | 1991-11-28 | JP2842488B2 | 1999-01-06 | ICHIMURA KATSUMI; IKEDA YASUHIRO |
| 138 | Polycrystalline silicon rod own weight holder tightening | JP34198791 | 1991-11-28 | JP2617258B2 | 1997-06-04 | 慶一 中沢; 倫明 服部 |
| 139 | Semiconductor crystal rod supporting device | JP3136792 | 1992-01-21 | JP2535470B2 | 1996-09-18 | KIMURA MASAKI; YOKOO NARYUKI |
| 140 | Apparatus for producing single crystal | JP23511694 | 1994-09-29 | JPH0891979A | 1996-04-09 | HANIYU KAZUTAKA; ENOMOTO MASAHISA |
| PURPOSE: To prevent a single crystal from damaging in taking out thereof after production and improve the productivity. CONSTITUTION: This apparatus for producing a single crystal is obtained by forming a recessed part in the tip surface of a vertically moving shaft, forming a flange part in a seed crystal holder for holding a seed crystal so as to provide a lower side surface with a receiving surface for the shaft tip surface, inserting the base end of the seed crystal holder into the recessed part, bringing the lower side surface of the flange part into contact with the tip of the shaft and supporting the seed crystal holder in a state thereof placed on the shaft. When the shaft is vertically moved while being rotated, rotation transmitting means for transmitting the rotation of the shaft to the seed crystal holder to the seed crystal holder are installed in the shaft and the seed crystal holder. Furthermore, transmitting means obtained by screwing a supporting part 6 having the recessed part 14 and the flange part 12 into the tip of the shaft, forming an engaging part of a groove part 15 in the flange part 12 so as to engage sides 15b and 15c thereof with peripheral surfaces 10b and 10c formed in a connector part 5 of the seed crystal holder and regulating the rotation of the seed crystal holder are cited as the rotation transmitting means. | ||||||
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