| 序号 | 专利名 | 申请号 | 申请日 | 公开（公告）号 | 公开（公告）日 | 发明人 |
|---|---|---|---|---|---|---|
| 181 | Method of and apparatus for growing crystals | US772558 | 1985-09-04 | US4708764A | 1987-11-24 | Karl Boden; Harald Ibach; Udo Linke |
| A complex relative movement in a direction transverse to the crystal draw direction is imparted at the interface between the growing crystal bar and a melt of the crystallizable material by controlled electrical energization of a radial stabilizer acting upon the magnetizable core by which either the bar or the crucible or a supply bar for the material, or both, can be suspended. | ||||||
| 182 | Method for producing a single crystal of a III.sub.b -V.sub.b compound | US359204 | 1982-03-18 | US4483736A | 1984-11-20 | Fumio Orito |
| When the growth of a single crystalline III.sub.b -V.sub.b group compound is carried out employing the horizontal Bridgeman method or the gradient freeze method, it is likely that polycrystals will be grown, crystal defects will form, and the distribution of impurities will not be uniform, especially if the diameter of the single crystal is large. In the present invention, the cooling rate of the melt is controlled in an inconstant manner. Namely, crystal growth is interrupted at least once and/or the cooling rate at an earlier growth period is controlled at a high value. From 40 to 65% of the total melt crystallizes at the time when 30% of the total time required for growth has elapsed. The high yield of a single crystal is attained according to the present invention. | ||||||
| 183 | Apparatus for semiconductor ribbon-to-ribbon conversion | US301627 | 1981-09-14 | US4427638A | 1984-01-24 | Ralph J. Ellis; Richard W. Gurtler; Kalluri R. Sarma |
| Apparatus is provided for semiconductor ribbon-to-ribbon conversion in a rigid edge mode. A combination carrier and mask is provided by which the ribbon is secured during the conversion process. The carrier holds the ribbon and simultaneously masks the edges of the ribbon from the heating effects of an impinging energy beam. The energy beam, such as a laser or electron beam, impinges on the ribbon and creates a molten zone which extends through the thickness of the ribbon. During the growth process, the molten zone is caused to move along the length of the ribbon. The mask prevents melting of the extreme edge portions of the ribbon and thus allows a rapid growth rate and a stable molten zone without sophisticated electronic equipment to gate the energy beam at the ribbon edges. | ||||||
| 184 | Apparatus for manufacturing high quality crystals | US68219 | 1979-08-20 | US4267154A | 1981-05-12 | Georg Mueller; Herbert Weiss |
| Method and apparatus for manufacturing high quality crystals whereby crystal growth occurs from a melt or a gas phase and during such growth, the growing crystals are subjected to a gravitational acceleration generating and reinforcing the development of a chronologically constant, highly stationary, convection current within the growing crystal. The apparatus includes a centrifuge means having a crystal growth means mounted thereon, along with means for controlling the centrifuge and for controlling the thermal system associated with the crystal growth means. | ||||||
| 185 | Apparatus for the zone pulling of monocrystal rods | US830379 | 1977-09-02 | US4218424A | 1980-08-19 | Joachim Floymayr; Karl Jericho; Dietrich Drechsel; Friedrich Bubeck |
| An apparatus for the zone drawing of monocrystal rods comprises a hermetically sealed housing having two rod holders movably disposed rotatably and vertically one over the other within the housing. A stationary high frequency heating system is disposed between the rod holders. Each rod holder comprises one transport slide, a sliding guide and a spindle drive disposed within the housing for the independent vertical movement of the rod holders and one drive for the rotation of the rod holders. | ||||||
| 186 | Apparatus for imparting combined centrosymmetric and noncentro-symmetric rotation to semiconductor bodies | US733239 | 1976-10-18 | US4087239A | 1978-05-02 | Harvey E. Cline; Thomas R. Anthony |
| An apparatus for imparting combined centro-symmetric and noncentro-symmetric rotation to semiconductor bodies comprises a liquid-cooled sun gear, a stationary liquid-cooled ring gear coaxial with and radially spaced outwardly from the sun gear, and at least one planet gear disposed between and driven in engagement with the sun and ring gears. Means are provided for supporting a semiconductor body on each of the planet gears while minimizing the conduction of heat from the semiconductor body to the planet gear. Means are also provided for guiding a semiconductor body onto the supporting means and centering the semiconductor body on the planet gear. Thermal distortion of the apparatus is minimized when heated to extreme temperatures making the apparatus ideally suited for processing the semiconductor bodies with heat as in processing by temperature gradient zone melting. | ||||||
| 187 | Support device for use in a crucible-free floating zone melting apparatus | US632957 | 1975-11-18 | US4045183A | 1977-08-30 | Gerhard Barowski; Wolfgang Keller; Gerhard Schroetter |
| In an apparatus for crucible-free zone melting, a device for supporting a lower end of the crystalline rod of semiconductor which has a junction with a seed crystal characterized by the support device being formed by a plurality of sections or parts which are moveable relative to each other from a first position spaced or retracted from the seed crystal and the lower end of the rod to enable melting the rod adjacent to the junction and a second position forming a container surrounding the seed crystal and the lower end of the rod for receiving a supporting or stabilizing medium which dampens or prevents vibrations from being applied to the lower end of the rod and the junction. The sections are held in the second position by a holding means which may either be electromagnetic or mechanical. | ||||||
| 188 | Single crystal growth apparatus with fluid bearing and fluid drive means | US481381 | 1974-06-20 | US3966416A | 1976-06-29 | Jean-Claude Tranchart; Jacques Charles Louis Bunel |
| A driving device for slow movement vertically and rotationally comprises a cylindrical central member having the workload on the upper end, and the lower end on a thrust bearing on a float immersed in a liquid whose supply can be controlled for vertical displacement.Chambers insulated from each other, and supplied with compressed air, surround the central member. Nozzles in the chamber walls establish fluid bearings to self-center the central member and to rotate it. | ||||||
| 189 | Mounting device for crystalline rods | US44616074 | 1974-02-27 | US3901499A | 1975-08-26 | SPORRER LUDWIG |
| A device for mounting crystalline rods, such as semiconductor rods which are undergoing a floating zone melt treatment, comprised of a frame for supporting a rod and and having a plurality of axially extending open spaces in the peripheral boundary thereof, along with adjustable screws for mating with bores in the frame periphery for anchoring and centering a rod end within the frame.
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| 190 | Apparatus for producing rod-shaped members of crystalline material | US3620682D | 1969-10-31 | US3620682A | 1971-11-16 | KELLER WOLFGANG |
| Combination in apparatus for producing rod-shaped members of crystalline material includes a sealed receptacle having a top wall, bottom wall and lateral wall portions, a pair of rod holders located in the receptacle substantially along the vertical central axis of the receptacle for supporting a rodshaped member of crystalline material therebetween, heating means mounted in the receptacle for producing a melting zone in the rod-shaped crystalline member, the heating means and the holders being displaceable relative to one another for passing the melting zone along the rod-shaped crystalline member, and drive means extending into the receptacle through a wall portion other than the bottom wall portion from a location outside the receptacle for moving the holders and the heating means relative to one another.
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| 191 | Floating-zone melting apparatus | US3592611D | 1968-10-25 | US3592611A | 1971-07-13 | EDER GEORG; EMEIS REIMER; KELLER WOLFGANG |
| APPARATUS FOR REFINING A ROD ACCORDING TO THE FLOATINGZONE MELTING TECHNIQUE INCLUDES ROTARY SHAFT MEANS ADAPTED TO CARRY AND ROTATE A ROD DURING SUBJECTION THEREOF TO THE FLOATING-ZONE MELTING TECHNIQUE, PLAY-FREE WORMDRIVE MEANS OPERATIVELY CONNECTED TO THE ROTARY SHAFT MEANS FOR ROTATING THE LATTER, CARRIAGE MEANS CARRYING THE ROTARY SHAFT MEANS, BALL-BEARING GUIDE MEANS GUIDING THE CARRIAGE MEANS FOR MOVEMENT, AND ROTARY BALL-BEARING SPINDLE MEANS OPERATIVELY CONNECTED TO THE CARRIAGE MEANS FOR DISPLACING THE LATTER, SO THAT THE ROD IS MAINTAINED FREE OF MECHANICAL VIBRATIONS DURING TREATMENT OF THE ROD ACCORDING TO THE FLOATING-ZONE MELTING TECHNIQUE.
D R A W I N G |
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| 192 | Eccentrically rotated rod holder for crucible-free zone melting | US3522014D | 1966-11-28 | US3522014A | 1970-07-28 | KELLER WOLFGANG |
| 193 | Method and apparatus for increasing the cross section of a crystalline rod during crucible-free zone melting | US66421167 | 1967-08-29 | US3414388A | 1968-12-03 | WOLFGANG KELLER |
| 194 | Apparatus for zone melting of semiconductor bodies through high-frequency heating | US49402565 | 1965-10-08 | US3410945A | 1968-11-12 | REGNER KAREL; PETRASEK JOSEF |
| 195 | Apparatus for crucible-free zone melting with a vacuum chamber | US50167465 | 1965-10-22 | US3391235A | 1968-07-02 | REIMER EMEIS |
| 196 | Process for the continuous separation of crystallizable substances | US45155965 | 1965-04-28 | US3375082A | 1968-03-26 | GRAF RODERICH |
| 197 | Producing and regulating translatory movement in the manufacture of semiconductor bodies | US39663564 | 1964-09-15 | US3340016A | 1967-09-05 | HEINZ WIRTH; MANFRED RODER; WOLFGANG DIETZ |
| 198 | Slim crystalline rod pullers with centering means | US27761363 | 1963-05-02 | US3259468A | 1966-07-05 | STEVENS HARRY M; TUCKER WILLIAM F |
| 199 | Method and device for the successive zone melting and resolidifying of extremely pure substances | US20901662 | 1962-07-11 | US3234009A | 1966-02-08 | KARL SIEBERTZ |
| 200 | Certificate of correction | US3124633D | US3124633A | 1964-03-10 | ||
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