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Material detector using semiconductor probe and radioactive-chemical reaction

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专利汇可以提供Material detector using semiconductor probe and radioactive-chemical reaction专利检索,专利查询,专利分析的服务。并且Oxygen, hydrogen, sulfate ion and other materials are quantitatively determined by a solid-state detector which receives radiation from an element which is chemically reactive with the material being determined. The element contains the inert gas radioisotope krypton-85 interstitially retained within the lattice of the element and released during the reaction with the material being determined. The change in residual radioactivity of the element, as a function of current output of the solid-state detector, is indicated in terms of percentage by a utilization circuit including a differentiating circuit.,下面是Material detector using semiconductor probe and radioactive-chemical reaction专利的具体信息内容。

1. A semiconductor detector sensitive to a specific reaction as an indication of the quantity of an unknown to be measured comprising a semiconductor member including means defining a working face, cover means over said working face and permeable to radiation, radioisotope-bearing material in contact with at least a portion of said cover means and in radiation transmitting relation with said working face for releasing radiation in the presence of the unknown, said material comprising a base member and an interstitially retained inert gas radioisotope, said base member being so coordinated and correlated with the unknown as to react therewith thereby releasing said radioisotope as a function of the quantity of the unknown, and said semiconductor operative to produce an output current in response to impingement of radiation thereon.
2. A semiconductor detector as set forth in claim 1 further including utilization means receiving said output current and indicating the amount of said unknown.
3. A semiconductor detector as set forth in claim 1 wherein said inert gas radioisotope is krypton-85.
4. A semiconductor detector as set forth in claim 3 wherein the unknown to be measured is hydrogen gas and said base member is platinum dioxide, and wherein said inert gas radioisotope is krypton-85.
5. A semiconductor detector as set forth in claim 3 wherein the unknown to be measured is oxygen gas and said base member is graphite, and wherein said inert gas radioisotope is krypton-85.
6. A semiconductor detector as set forth in claim 3 wherein the unknown to be measured is the sulfate ion and said base member is barium carbonate, and wherein said inert gas radioisotope is krypton-85.
7. A semiconductor detector as set forth in claim 2 wherein said utilization means includes a differentiating circuit.
8. A semiconductor as set forth in claim 1 wherein said radioisotope-bearing material is covered by a gas permeable material.
9. A semiconductor detector as set forth in claim 1 wherein said semiconductor member is a solid-state material including a p/n junction.
10. A semiconductor detector as set forth in claim 1 wherein said radioisotope-bearing material is replaceable by a different radioisotope material responsive to an unknown different from said unknown.
11. Apparatus for detecting the presence of a constituent element in an environment comprising, a probe including a base member having an interstitially retained inert gas radioisotope, said base member being selected to react primarily with said constituent element to release a portion of said retained radioisotope, and a radiation detector mounted integrally with said base member and responsive to said retained radioisotope for providing an indication of the presence of said constituent element in said environment.
12. Apparatus as in claim 11 wherein said radiation detector is physically mounted against said base member.
13. Apparatus as in claim 11 wherein said base member is releasably secured to said radiation detector.
14. Apparatus as in claim 11 wherein said radiation detector comprises a semiconductor detector.
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