专利汇可以提供Manufacturing of thin film solar cell专利检索,专利查询,专利分析的服务。并且PURPOSE:To improve the efficiency of a solar cell by a method wherein, after an electrode is formed by piling an N type amorphous Si thin film on a P type amorphous Si thin film, the electrode is treated with heat in H2 at a certain atmospheric pressure. CONSTITUTION:An ITO 2 is formed in a prescribed pattern on a glass plate 1 by the conventional method. A P type amorphous Si thin film 3 is made from a mixed gas of and monosilane and disilane. An amorphous I layer 4 is made from monosilane, and an N type amorphous Si thin film 5 is further put on them to form a metallic electrode. Next the electrode is treated with heat in an H2 gas at 1-10 atmospheric pressures. By so doing, processing at temperatures other than those for the formation of an amorphous Si becomes possible. Therefore, processing conditions for reducing localized levels are enlarged, while the efficiency of a solar cell is improved because the processing is carried out in a pressurized state. In addition, use of an H2 gas mainly composed of Ar, N2, etc. makes work safer.,下面是Manufacturing of thin film solar cell专利的具体信息内容。
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