Manufacture of photosensitive semiconductor device
专利汇可以提供Manufacture of photosensitive semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE:To contrive to improve the photoelectric conversion coefficient for the subject semiconductor device by a method wherein the metal film coated on a transparent insulated substrate is selectively anodic-oxidized and the metal film having a transparent film section is formed. CONSTITUTION:The Al film 8 of L thickness is evaporated on the transparent insulated substrate 1 and a lattice type resist mask is provided. An Al2O3 10 film of L thickness is obtained by having the Al film 8 anodic oxidated in a dilute sulfuric acid solution. When a mask 9 is removed, an Al2O3 11 and an Al 10 are arranged alternately and the difference in level of the two layers becomes 0.3- 0.5L or thereabouts making a gentle inclination from the Al 10 to Al2O3 11. Accordingly, no disconnection is generated on the transparent conductive film 2 formed on a lattice type electrode 11 and the film is formed thickly, thereby enabling to reduce electric resistance. Then amorphous Si 3-5 of P type dope, nondope and N type dope are laminated and an electrode is added, and a thin film solar battery with a lattice type electrode is now completed. Accordingly to this constitution, the device having a high photoelectric conversion coefficiency can be obtained.，下面是Manufacture of photosensitive semiconductor device专利的具体信息内容。
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