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Semiconductor device

阅读:253发布:2021-12-20

专利汇可以提供Semiconductor device专利检索,专利查询,专利分析的服务。并且PURPOSE:To realize a cooling means for semiconductor device which does not require an exclusive power supply and can be loaded easily by integrating a Peltier effect element into a GaAs semiconductor device and utilizing an operating current of semiconductor device itself for Peltier cooling. CONSTITUTION:A Ge single crystal 2 is formed on an N type GaAs substrate 1. A semi-insulating GaAs single crystal layer 3 is formed on a single crystal 2. A logic IC layer 4 is formed as the active layer on the surface of single crystal layer 3. The wirings for drain electrode 5 and source electrode 6 are provided on the upper surface of said active layer, thus forming a Schottky gate FET. An ohmic electrode 7 is fixed on the heat sink material consisting of a diamond in the opposite side of the substrate 1. The electrode 8 is fixed to the earth. When each logic IC layer 4 executes logic operation, a current flows between the source and drain and a current I flows into the substrate 1 through the electrodes 6, 7. The Peltier effect is generated by this operation.,下面是Semiconductor device专利的具体信息内容。

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