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Half-turn word line return for plated-wire memory array

阅读:332发布:2023-11-19

专利汇可以提供Half-turn word line return for plated-wire memory array专利检索,专利查询,专利分析的服务。并且A plated-wire memory system tunnel structure and method of operation are disclosed. The tunnel structure is comprised of a planar insulative base member having a plurality of tunneloriented plated-wire memory elements passing therethrough. On one planar surface of the base member there is formed a comb-like copper member of alternately relatively-narrow return lines and interstitial relatively-wide word lines. In operation, the word current flows down the one selected word line, splits and returns back to ground through the parallel grounded return lines. The return current flowing back through the two return lines that are adjacent to the one selected word line provide a net word drive field that is substantially uncoupled from the next two adjacent work lines providing minimum disturb pulse effects thereon.,下面是Half-turn word line return for plated-wire memory array专利的具体信息内容。

1. A plated-wire memory tunnel structure, comprising: a planar insulative base member having parallel first and second surfaces with a plurality of parallely aligned tunnels passing therebetween; a planar continuously conductive sheet member affixed to said first surface, said conductive sheet member being a comb-like arrangement of; a base member; a plurality of parallel, alternate word lines and return lines orthogonally extending from said base element; a planar conductive ground plane affixed to said second surface; means for intercoupling the otherwise open ends of all of said return lines to a common line.
2. The structure of claim 1 in which said word lines are relatively-wider than the relatively-narrower return lines for providing greater current conducting capacity in said word lines than in said return lines.
3. The structure of claim 2 in which said word lines are approximately twice the width of said return lines.
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