Semiconductor photoelectric converter
专利汇可以提供Semiconductor photoelectric converter专利检索，专利查询，专利分析的服务。并且PURPOSE:To obtain a semiconductor device having high photoelectric conversion efficiency by forming a Schottky or MIS junction parallel to the surface of a substrate on the front or back semiconductor surface of a columnar cluster structure made of semiamorphous semiconductor formed on the substrate. CONSTITUTION:The first electrode 54 is covered on a substrate 10 made of glass, stainless steel or semiconductor or the like, is contained in a reaction tube, reactive substance, e.g., SimHm or SiF4 or the like diluted with He is introduced to the tube, and the tube is heated with high frequency energy at approx. 800 deg.C. Thus, layers 53, 55, 51 each having columnar cluster in N type and true and P type semiamorphous structure are laminated and grown on the electrode 54, and lattice- shaped electrode 52 is mounted on the uppermost layer 51. Thereafter, light 456 is incident to the layer 51 side, and electrons and holes produced on the light emitted surface are produced from the electrodes 52, 54. In this manner, the photoelectric conversion efficiency can be improved in the elemen to 7-12%, and can be largely improved as compared with the junction of not cluster structure.，下面是Semiconductor photoelectric converter专利的具体信息内容。
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