Manufacturing semiconductor
专利汇可以提供Manufacturing semiconductor专利检索，专利查询，专利分析的服务。并且PURPOSE: To enhance reliability of a element by aligning the orientation in a crystal plane of a substrate crystal with the direction of semiconductor to be manufactured by using etch pit as a mark, which are caused by thermal-oxidation-excited defect layer formed in a monocrystal semiconductor substrate.
CONSTITUTION: In the case diffusion is performed in an Si monocrystal substrate having a (100) crystal plane, part of the periphery of the substrate is selectively etched after all the surface is thermally oxidized, and etch pit caused by thermal- oxidation-excitation defect laver are formed. The etching is performed for 30W60sec at a normal temperature by using selective-etching liquid prpared by mixing chromic acid and hydrofluoric acid. In this method, a line 1 indicating the orientation of the crystal plane (-110) and a line 2 indicating the orientation (1-10) are generated. Then, the direction of one side of a V-groove provided on the substrate is alinged with said lines, and a V-MOS and the like are manufactured. In this method, uneven thicknesses of oxidized films to be provided in the later process will not be caused and the degradation of a threshold value is not generated.
COPYRIGHT: (C)1980,JPO&Japio，下面是Manufacturing semiconductor专利的具体信息内容。
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