Methods and apparatus for the production of semiconductor devices by electron-beam patterning and devices produced thereby专利检索-电子束曝光微电子学专利检索查询-专利查询网

Methods and apparatus for the production of semiconductor devices by electron-beam patterning and devices produced thereby

阅读：84发布：2023-04-16

专利汇可以提供Methods and apparatus for the production of semiconductor devices by electron-beam patterning and devices produced thereby专利检索，专利查询，专利分析的服务。并且This specification describes the method and apparatus for the exposure of sensitive resists by the use of closely scanned rasters described by a focussed electron beam. Variation in the line width is used to produce different raster shapes as required. A succession of similar rasters can be described spaced over a semiconductor wafer for the purpose of producing the patterning required for the production of a plurality of similar semiconductor devices on the single wafer. A technique for aligning the wafer with the scan of the electron beam is described using markers distributed over the surface of the wafer there being one marker for each small raster to be described by the beam from the wafer; one alignment system using a cathode-ray tube display of the images of the reference marker magnified and placed closed together on the screen so that errors in alignment can readily be detected.，下面是Methods and apparatus for the production of semiconductor devices by electron-beam patterning and devices produced thereby专利的具体信息内容。

权利要求

1. A method for selectively exposing an electron bombardment sensitive material on a substrate surface using an electron beam apparatus having a predetermined optical field, wherein said sensitive material includes a plurality of areas respectively corresponding to said optical field of said electron beam apparatus, and means for stepping said electron beam to successively expose said plurality of areas such that each exposed area is aligned relative to a reference pattern, including the steps of: 1. forming adjacent a surface of said electron beam sensitive material an alignment marker pattern associated with said areas and corresponding to said reference pattern, 2. sequentially step scanning in a uninterrupted sequence the said alignment pattern associated with a selected one of said areas to generate data signals corresponding to said alignment marker pattern and indicating positional errors of said alignment marker pattern relative to said reference alignment pattern, 3. adjusting the relative positions of the scanning path of said electron beam and said substrate in response to said data signals to precisely align said alignment marker pattern and said reference alignment pattern, 4. and then without moving said substrate step scanning said electron beam over selected portions of predetermined sub-areas within said aligned one area in an uninterrupted sequence to selectively expose said portions in each sub-area whereby said exposed portions of said sub-areas have precisely predetermined positional relationships relative to said reference alignment pattern.

2. sequentially step scanning in a uninterrupted sequence the said alignment pattern associated with a selected one of said areas to generate data signals corresponding to said alignment marker pattern and indicating positional errors of said alignment marker pattern relative to said reference alignment pattern,

2. The method according to claim 1, wherein the alignment marker pattern comprises indentations in said substrate surface and a coating of insulating material overlies the alignment marker pattern.

3. The method according to claim 1, and including: a. generating a magnified display responsive to the data signals indicating positional errors of the alignment marker pattern relative to the said reference alignment pattern, and b. adjusting the relative positions of the scanning path of the electron beam and the substrate in response to the said display to precisely align said alignment marker pattern and said reference alignment pattern.

3. adjusting the relative positions of the scanning path of said electron beam and said substrate in response to said data signals to precisely align said alignment marker pattern and said reference alignment pattern,

4. and then without moving said substrate step scanning said electron beam over selected portions of predetermined sub-areas within said aligned one area in an uninterrupted sequence to selectively expose said portions in each sub-area whereby said exposed portions of said sub-areas have precisely predetermined positional relationships relative to said reference alignment pattern.

4. A method according to claim 1, wherein said step of generating said data signals comprises generating a video signal responsive to secondary electron emission from the substrate due to impact of the electron beam thereon.

5. A method according to claim 1, wherein each said step of scanning with an electron beam comprises: a. focussing the beam on the sensitive material, and b. scanning a closely spaced raster with the focussed electron beam.

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Methods and apparatus for the production of semiconductor devices by electron-beam patterning and devices produced thereby

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