Ion implanter
专利汇可以提供Ion implanter专利检索，专利查询，专利分析的服务。并且PURPOSE: To hinder an ion beam from widening due to an electrode upstream an analyzing slit and enhance the mass analyzing capacity by constituting a beam expander line system of an ion implanter to be used in manufacture of semiconductors etc., from an expander suppressor electrode situated on the analyzing slit side and an expander electrode situated on the Faraday line system side.
CONSTITUTION: A beam expander line system 12 of an ion implanter is constitut ed from an expander suppressor electrode 13 and an expander electrode 14, and a positive potential is impressed on the electrode 14, and electrons included in an ion beam 20 are sucked in. At this time, the beam width is widened and the section area is enlarged, and the strength per unit area of the beam implanted in a wafer 9 is reduced, and charging-up is decreased. The voltage impressed on the electrode 13 is used together with a suppressor electrode 7 of a Faraday line system 5 so that they have the same potential, and the electrons upstream an analyzing slit 3 are hindered from being sucked to in the electrode 14, and thus widening of the beam 20 is prevented.
COPYRIGHT: (C)1989,JPO&Japio，下面是Ion implanter专利的具体信息内容。
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