首页 / 专利库 / 电路 / 单晶碳化硅 / Method and apparatus for preparation of silicon single crystal

Method and apparatus for preparation of silicon single crystal

阅读:114发布:2022-05-13

专利汇可以提供Method and apparatus for preparation of silicon single crystal专利检索,专利查询,专利分析的服务。并且PURPOSE:To obtain a silicon single crystal containing a proper amount of oxygen, by contacting molten silicon with silicon oxide in the course of pulling the silicon single crystal from molten silicon using a silicon nitride or silicon carbide crucible. CONSTITUTION:High purity molten Si 3 is put into a graphite crucible 2 lined with an Si3N4 or SiC layer 1, and a silicon single crystal 4 is pulled by using a seed silicon crystal. In the above process, a material 5 obtained by coating the tungsten core weight 7 with a silicon oxide 6 such as SiO2 or SiO (e.g. quartz glass) is sent to the bottom of the crucible 2. The pulled silicon single crystal 4 contains the oxygen transferred from the material 5, and the silicon wafer prepared therefrom is free from the problems of strain-development during thermal treatment which are inherent to the wafer prepared from oxygen-free silicon single crystal.,下面是Method and apparatus for preparation of silicon single crystal专利的具体信息内容。

高效检索全球专利

专利汇是专利免费检索,专利查询,专利分析-国家发明专利查询检索分析平台,是提供专利分析,专利查询,专利检索等数据服务功能的知识产权数据服务商。

我们的产品包含105个国家的1.26亿组数据,免费查、免费专利分析。

申请试用

分析报告

专利汇分析报告产品可以对行业情报数据进行梳理分析,涉及维度包括行业专利基本状况分析、地域分析、技术分析、发明人分析、申请人分析、专利权人分析、失效分析、核心专利分析、法律分析、研发重点分析、企业专利处境分析、技术处境分析、专利寿命分析、企业定位分析、引证分析等超过60个分析角度,系统通过AI智能系统对图表进行解读,只需1分钟,一键生成行业专利分析报告。

申请试用

QQ群二维码
意见反馈