Pulling up device for single crystal silicon
专利汇可以提供Pulling up device for single crystal silicon专利检索，专利查询，专利分析的服务。并且PURPOSE:To improve thermal efficiency and the quality of single crystal Si by providing a reflection plate of a recessing shape above the crucible in a chamber in such a way that the focus thereof is formed annularly on the molten Si surface on the side outer than the outside circumference of an ingot. CONSTITUTION:In the stage of producing single crystal Si by a Czochralski method, a reflection plate 8 of which the surface facing a crucible 2 assumes a recessing shape reflects the radiation heat emitted from the liquid surface of molten Si 12. Since the focus of the plate 8 is formed annularly on the liquid surface of the Si 12 on the side outer than the single crystal ingot, only the Si 12 is heated and thermal efficiency is improved. As a result, there is no need for heating a graphite heater 5 to high temp. and electric power consumption is economized. Since the oxidation of the heater 5 can be suppressed, the inclusion of carbon impurities into the single crystal ingot can be decreased. Further, the heating of the crucible 2 made of quartz geaphite to high temp. is prevented and the reaction of the crucible 2 and the Si 12 is suppressed, whereby the inclusion of oxygen impurities in the ingot is decreased.，下面是Pulling up device for single crystal silicon专利的具体信息内容。
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6 生产单晶硅的方法
