Apparatus for pulling up single crystal silicon
专利汇可以提供Apparatus for pulling up single crystal silicon专利检索，专利查询，专利分析的服务。并且PURPOSE:To prevent a change in the resistance value of single crystal Si and to uniformalize and reduce the concn. of oxygen as an impurity by immersing a silicon nitride structure in molten Si in the crucible of an apparatus for manufacturing single crystal Si by the CZ method to prevent the convection of the molten Si. CONSTITUTION:A quartz crucible 2 is supported in a chamber 1 by a freely rotatable rod 4 through a graphite protector 3 covering the outside of the crucible 2, and a cylindrical heater 5 and heat insulating tubes 6, 7 are arranged around the protector 3 in order. Si as a starting material and a dopant for controlling the resistance value of a single crystal Si ingot are put in the crucible 2 and melted with the heater 5. A seed crystal 8 attached to the lower end of a rotatable pulling shaft 9 is dipped in the molten Si10, and the shaft 9 is pulled up. In order to prevent the convection of the molten Si10 during the pulling, a crucible-shaped silicon nitride structure 11 having holes 11a... at the desired positions of the bottom is immersed in the Si10, and the upper part protruding from the surface of the melt 10 is supported on the crucible 2.，下面是Apparatus for pulling up single crystal silicon专利的具体信息内容。
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6 生产单晶硅的方法
