Evaluation for silicon single crystal
专利汇可以提供Evaluation for silicon single crystal专利检索，专利查询，专利分析的服务。并且PURPOSE:To perform an evaluation instead of an evaluation on a microscopic deposition contained in a single crystal such as O, C by a method wherein on a surface of an object to be tested consisting of a p type Si single crystal which has a specific resistance of 5-20OMEGAcm, a negative charge film is formed, and a life of a minority carrier is measured, and when it is more than 200X10 sec, a product is evaluated to be good. CONSTITUTION:A plurality of wafers are produced from a single crystal Si ingot which has fabricated by Czochrlski method and contains B and has a specific resistance of 5-20OMEGAcm, and for the purpose of forming a negative electron film on a surface of an object to be tested, they are washed by HF; and washed by H2O after they are boiled in a mixed solution of Na2Cr2O7 of 1 volume and H2O of 99 volume Next the object to be tested is irradiated by microwave through an open ended wave guide, and an exponential damping characteristics of a reflected wave which is generated after suspension of irradiation is monitored by CRT. Because this characteristics depends on a life of a minority carrier, its life is known, and if its value is 200mus, a product is evaluated to be good.，下面是Evaluation for silicon single crystal专利的具体信息内容。
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6 生产单晶硅的方法
