Single crystal silicon substrate
专利汇可以提供Single crystal silicon substrate专利检索，专利查询，专利分析的服务。并且PURPOSE: To prevent a single crystal silicon substrate of a specified large diameter from being warped and omit a back side lapping process by adjusting the substrate to a specified thickness and finishing both sides of the substrate by mirror polishing.
CONSTITUTION: Single crystal silicon ingot 1 is fixed to the desired crystal face orientation and formed into substrate 2 of ≥90mmϕ diameter and the designated thickness, e.g., about 650μ. Both sides of substrate 2 are lapped by about 50μ each with a lapping device and abrasives of coarse grain size to form substrate 3. Both sides of substrate 3 are then etched by about 50μ each with a mixed soln. of hydrofluoric acid, nitric acid, glacial acetic acid and iodine to form substrate 4. finally, both sides of substrate 4 is mirror polished by about 10W15μ each with a polishing device, abrasives of fine grain size and felt to obtain substrate 5 of 400±15μ final thickness. When substrate 5 is treated in a process of manufacturing an integrated circuit element, warpage is restricted to ≤ about 10μ, resulting in no reduction in photoalignment accuracy.
COPYRIGHT: (C)1981,JPO&Japio，下面是Single crystal silicon substrate专利的具体信息内容。
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6 生产单晶硅的方法
