Complementary semiconductor device
专利汇可以提供Complementary semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE:To obtain a complementary metal oxide semiconductor (CMOS) device by precipitating the single crystal Si film on the single crystal Si substrate and the amorphous dielectric material partially provided on such substrate and by providing the source, drain and gate thereon. CONSTITUTION:The windows are opened selectively on the thermal oxide film 42 on the n type Si substrate 41, and the smooth n type single crystal Si 43 is formed over the substrate at 1,080 deg.C with a pressure of about 80Torr using H2 as the carrier and SiH2Cl2. The surface is then covered with the oxide film 44, the p well 45 is formed by the ion implantation and these are adjusted to the desired threshold voltages respectively. The poly-Si 46 and Si3N4 47 are selectively deposited and then the n layer 48 is formed by ion implantation. After the annealing, the Si3N4 47 is removed, the boron B is diffused into the poly-Si 47 and the patterning is carried out. Next, the boron ion is implanted in order to form the P layer 49, which is then covered with the phosphosilicate glass PSG50 after the thermal treatment. Succeedingly, the A electrode 51 is provided and the Al-Si alloy is formed under the H2 atmosphere, thus completing the device. According to this structure, the diffusion capacitance dielectrically isolated from the diffused region of so-called channel stopper is remarkably reduced, facilitating the high speed operation and micro-miniaturization.，下面是Complementary semiconductor device专利的具体信息内容。
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