Integrated optically coupled light emitter and sensor
阅读：335发布：2022-07-12
专利汇可以提供Integrated optically coupled light emitter and sensor专利检索，专利查询，专利分析的服务。并且An optically coupled light emitting diode and photo detector is disclosed, which includes an isolation region made from the same semiconductor material as the light emitting diode and photo detector. The structure involved consists basically of four semiconductor regions, one pair of which is separated from another pair by a semiconductor isolation region. The isolation region is of the same semiconductor material as the pairs of semiconductor regions which form a light emitting diode and a photo detector. By using an isolation region of the same semiconductor material as that of the light emitting diode and the photo diode, an integrated device is provided which eliminates index of refraction and lattice constant mismatches between the light emitter and optical detector. The integrated device is fabricated from a single semiconductor material gallium aluminum arsenide and is fabricated using well known liquid phase or other epitaxial growth techniques. The resulting structure is completely symmetrical and has the unusual feature that it can be operated bidirectionally, i.e., the light emitting and photo detecting functions are completely interchangeable.，下面是Integrated optically coupled light emitter and sensor专利的具体信息内容。
1. A BIDIRECTIONAL, INTEGRATED, OPTICALLY COUPLED ISOLATOR COMPRISING: A LIGHT EMITTING DIODE OF GALLIUM ALUMINUM ARSENIDE SEMICONDUCTOR MATERIAL, A PHOTO DECTOR OF GALLIUM ALUMINUM ARSENIDE SEMICONDUCTOR MATERIAL, AN ISOLATION REGION OF GALLIUM ALUMINUM ARSENIDE SEMICONDUCTOR MATERIAL INTERPOSED BETWEEN SAID DIODE AND SAID PHOTO DETECTOR SAID ISOLATION REGION BEING HIGHLY TRANSPARENT TO LIGHT EMITTED BY SAID DIODE AND WHEREIN SAID ISOLATION REGION IS GA0.4AI0.6AS, WHEREIN SAID ISOLATION REGION IS SEMI-INSULATING AND HAS A DOPING LEVEL OF 10**6 ATOMS/CM3 AND A BAND GAP, EG, OF 2.05 EV.
2. A BIDIRECTIONAL, INTEGRATED, OPTICALLY COUPLED ISOLATOR COMPRISING: A LIGHT EMITTING DIODE OF GALLIUM ALUMINUM ARSENIDE SEMICONDUCTOR MATERIAL, A PHOTO DETECTOR OF GALLIUM ALUMINUM ARSENIDE SEMICONDUCTOR MATERIAL, AN ISOLATION REGION OF GALLIUM ALUMINUM ARSENIDE SEMICONDUCTOR MATERIAL INTERPOSED BETWEEN SAID DIODE AND SAID PHOTO DETECTOR SAID ISOLATION REGION BEING HIGHLY TRANSPARENT TO LIGHT EMITTED BY SAID DIODE AND WHEREIN SAID ISOLATION REGION IS GA0.4AI0.6AS, WHEREIN SAID ISOLATION REGION IS N-CONDUCTIVITY TYPE AND HAS A DOPING LEVEL OF 10**14 ATOMS/CM3 AND A BAND GAP, EG, OF 2.05 EV.
3. A bidirectional, integrated, optically coupled isolator comprising: a light emitting diode of gallium aluminum arsenide semiconductor material said diode having a first layer of one conductivity type and a second layer of opposite conductivity type forming at their interface a light emitting p-n junction, wherein said first layer is Ga0.7Al0.3As, is of n-conductivity type and has a doping level in the range 1017 - 1018 atoms/cm3, and a band gap, Eg, of 1.79 eV and wherein said second layer is Ga0.9Al0.1As, is of p-conductivity type and has a doping level in the range 1017 - 5 X 1017 atoms/cm3, and a band gap, Eg, of 1.55 eV, a photo detector of gallium aluminum arsenide semiconductor material, and an isolation region of gallium aluminum arsenide semiconductor material interposed between said diode and said photo detector, said isolation region being highly transparent to light emitted by said diode.
4. A bidirectional, integrated, optically coupled isolator comprising: a light emitting diode of gallium aluminum arsenide semiconductor material, a photo detector of gallium aluminum arsenide semiconductor material said photo detector having a first layer of one conductivity type and a second layer of opposite conductivity type forming at their interface a light absorbing p-n junction wherein said first layer is Ga0.7Al0.3As, is of n-conductivity type and has a doping level in the range of 1017 - 1018 atoms/cm 3, and a band gap, Eg, of 1.79 eV and wherein said second layer is Ga0.9Al0.1As, is of p-conductivity type and has a doping level in the range of 1017 - 5 X 1017 atoms/cm3, and, a band gap, Eg, of 1.55 eV, and an isolation region of gallium aluminum arsenide semiconductor material interposed between said diode and said photo detector, said isolation region Being highly transparent to light emitted by said diode.
5. A bidirectional, integrated optically coupled isolator comprising: a light emitting diode of gallium aluminum arsenide semiconductor material, a photo detector of gallium aluminum arsenide semiconductor material, an isolation region of gallium aluminum arsenide semiconductor material interposed between said diode and said photo detector, said isolation region being highly transparent to light emitted by said diode, and, a first contact region of gallium aluminum arsenide interposed between said light emitting diode and said isolation region and a second contact region of gallium aluminum arsenide interposed between said photo detector and said isolation region wherein said first and second contact regions are Ga0.7Al0.3As of p-conductivity type and each having a doping level in the range of 1018 - 10 19 atoms/cm3 and, an energy gap, Eg, of 1.79 eV.
6. A bidirectional, integrated, optically coupled isolator comprising: a light emitting diode of gallium aluminum arsenide semiconductor material said diode having a first layer of one conductivity type and a second layer of opposite conductivity type forming at their interface a light emitting p-n junction, wherein said first layer is Ga0.7Al0.3As, is of n conductivity type and has a doping level in the range 1017 - 1018 atoms/cm3, and a band gap, Eg, of 1.79 eV and wherein said second layer is Ga0.9Al0.1As, is of p-conductivity type and has a doping level in the range of 1017 - 5 X 1017 atoms/cm3, and a band gap, Eg, of 1.55 eV, a photo detector of gallium aluminum arsenide semiconductor material said photo detector having a first layer of one conductivity type and a second layer of opposite conductivity type forming at their interface a light absorbing p-n junction wherein said first layer is Ga0.7Al0.3As, is of n-conductivity type and has a doping level in the range of 1017 - 1018 atoms/cm 3, a band gap, Eg, of 1.79 eV and wherein said second layer is Ga0.9Al0.1As, is of p-conductivity type and has a doping level in the range of 1017 - 5 X 1017 atoms/cm3, and, a band gap, Eg, of 1.55 eV, and an isolation region of gallium aluminum arsenide semiconductor material interposed between said diode and said photo detector said isolation region being highly transparent to light emitted by said diode and wherein said isolation region is Ga0.4Al0.6As.
7. A bidirectional, integrated, optically coupled isolator according to claim 6 wherein said isolation region is semi-insulating and has a doping level of 106 atoms/cm3 and a band gap, Eg, of 2.05 eV.
8. A bidirectional, integrated, optically coupled isolator according to claim 6 wherein said isolation region is n-conductivity type and has a doping level of 1014 atoms/cm3 and a band gap, Eg, of 2.05 eV.
9. A bidirectional, integrated, optically coupled isolator according to claim 6, further including a first contact region of gallium aluminum arsenide interposed between said light emitting diode and said isolation region and a second contact region of gallium aluminum arsenide interposed between said photo detector and said isolation region wherein said first and second contact regions are Ga0.7Al0.3As of p-conductivity type and each has a doping level in the range of 1018 - 10 19 atoms/cm3 and, an energy gap, Eg, of 1.79 eV.
10. A bidirectional, integrated, optically coupled isolator according to claim 9 further including contact means connected to said first anD second regions and to said first layers of said photodetector and said light emitting diode.
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