Semitransparent photocathode专利检索-晶格匹配微电子学专利检索查询-专利查询网

Semitransparent photocathode

阅读：600发布：2022-07-13

专利汇可以提供Semitransparent photocathode专利检索，专利查询，专利分析的服务。并且In order to obtain an optimum freedom in the choice of the material in a semitransparent photocathode which consists of IIIV semiconductor compounds and in which the matching of the lattice constant of the active layer to that of the substrate is achieved by an intermediate layer, and thus to arrive at a sensitivity and/or optical wide band condition which is as high as possible, according to the invention the composition of the intermediate layer is independent of the substrate and of the active layer and its lattice constant differs from the lattice constant of the active layer by less than 0.3% and differs from the grid constant of the substrate up to several per cent, for example up to 3%. Such a photocathode may consist in particular of a substrate of GaP, an intermediate layer of AlxGa1 xAs with x>0.8 and an active layer of GaAs.，下面是Semitransparent photocathode专利的具体信息内容。

权利要求

1. A SEMITRASPERENT PHOTOCATHODE OF III-V SEMICONDUCTOR COMPOUNDS, HAVING A SUBSTRATE, AN INTERMEDIATE LAYER AND AN ACTIVE LAYER, THE ENERGY GAP OF THE ACTIVE LAYER BEING SMALLER THAN THAT OF THE INTERMEDIATE LAYER AND THE ACTIVE AND THE INTERMEDIATE LAYER BEING P-DOPED, THE INTERMEDIATE LAYER HAVING A COMPOSITION HAVING ELEMENTS WHICH DIFFER FROM THOSE OF THE SUBSTRATE AND THE ACTIVE LAYER AND A LATTICE CONSTANT DIFFER-

2. A photocathode as claimed in claim 1, wherein the intermediate layer consists of AlxGa1 xAs.

3. A photocathode as claimed in claim 1, wherein the intermediate layer consists of InxGa1 xP.

4. A photocathode as claimed in claim 1, wherein the intermediate layer consists of AlxIn1 xAs.

5. A photocathode as claimed in claim 1, wherein the intermediate layer consists of AlxGayIn1 x yP.

6. a photocathode as claimed in claim 1, wherein the substrate consists of GaP.

7. A photocathode as claimed in claim 1, wherein the substrate consists of sapphire.

8. A photocathode as claimed in claim 1, wherein the substrate consists of spinel.

9. A photocathode as claimed in claim 8, wherein the substrate consists of Mg-Ga spinel.

10. A photocathode as claimed in claim 9, wherein the substrate consists of a mixed spinel system such as Mg(InxGa1 x)2O4.

11. A photocathode as claimed in claim 1, wherein the active layer consists of a material selected from the group consisting of GaAs, (Ga, In) As and In (As, P).

12. A photocathode as claimed in claim 1, wherein the substrate consists of GaP, the intermediate layer consists of AlxGa1 xAs with x > 0.8 and the active layer consists of GaAs.

13. A photocathode as claimed in claim 1, wherein the substrate is a frame, consists of the same material as the active layer, and the intermediate layer and the active layer in the operative part of the photocathode are self-supporting.

14. A photocathode as claimed in claim 1, wherein the substrate consists of sapphire, the intermediate layer consists of AlAs, and the active layer consists of GaAs.

15. A photocathode as claimed in claim 1, wherein the substrate consists of a spinel, the intermediate layer consists of AlxGa1 xAs with x > 0.8, and the active layer consists of GaAs.

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Semitransparent photocathode

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