OPTICAL DEVICES UTILIZING SINGLE CRYSTAL GaP OR GaAs FILMS EPITAXIALLY GROWN ON CaF{11 {11 SUBSTRATES AND METHOD OF FABRICATING SAME专利检索-晶格匹配微电子学专利检索查询-专利查询网

OPTICAL DEVICES UTILIZING SINGLE CRYSTAL GaP OR GaAs FILMS EPITAXIALLY GROWN ON CaF{11 {11 SUBSTRATES AND METHOD OF FABRICATING SAME

阅读：113发布：2022-07-15

专利汇可以提供OPTICAL DEVICES UTILIZING SINGLE CRYSTAL GaP OR GaAs FILMS EPITAXIALLY GROWN ON CaF{11 {11 SUBSTRATES AND METHOD OF FABRICATING SAME专利检索，专利查询，专利分析的服务。并且Single Crystal GaP or GaAs films are epitaxially grown on CaF2 substrates by a molecular beam method. The film itself as well as the interface between the film and substrate exhibits few defects since the lattice constants of the film and substrate are substantially identical, thus making the films particularly useful as optical waveguides with reduced light scattering centers, or as nonlinear optical devices in which phase matching is readily accomplished by controlling the thickness of the film.，下面是OPTICAL DEVICES UTILIZING SINGLE CRYSTAL GaP OR GaAs FILMS EPITAXIALLY GROWN ON CaF{11 {11 SUBSTRATES AND METHOD OF FABRICATING SAME专利的具体信息内容。

权利要求

2. The method of claim 1 wherein said calcium fluoride substrate possesses an atomically clean surface upon which said film is grown.

3. The method of claim 2 wherein said background pressure is less than 1 X 10 9 torr.

4. The method of claim 2 wherein said calcium fluoride surface is a cleaved (111) surface.

5. The method of claim 4 wherein said material is GaP and including the steps of initially heating said substrate to a temperature within said range of 500*C-600*C until approximately 50 monolayers of epitaxial GaP are formed on said surface and then reducing said temperature by about 65*.

6. The method of claim 2 wherein said calcium fluoride surface is a polished (111) surface.

7. The method of claim 6 including the step of preheating said substrate to a temperature greater than 600*C for a period of time sufficient to clean and anneal said surface.

8. The method of claim 7 wherein said material is GaP and including the subsequent steps of heating said substrate to a temperature within said range of 500*C-600*C until approximately 50 monolayers of epitaxial GaP are formed on said surface and then reducing said temperature by about 105*.

9. The method in accordance with claim 1 wherein said molecular beam is formed by heating at least one gun member containing the constituent components of the desired epitaxial film to a temperature sufficient to vaporize said components and permitting the resultant vapor to impinge upon a collimating frame.

10. The method of claim 9 wherein said gun member is heated to a temperature in the range of 730*C-1,000*C.

11. The method in accordance with claim 9 wherein said gun member contains gallium arsenide.

12. The method in accordance with claim 9 wherein said gun member contains gallium phosphide.

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