Manufacture of semiconductor device
专利汇可以提供Manufacture of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE:To avoid generation of disconnection of wirings, and to enhance the degree of integration of a semiconductor device when element isolation regions are to be formed in a semiconductor substrate by a method wherein deep isolating grooves are dug at first, a shallow groove is formed between them, and an oxide film is covered on the grooves thereof to flatten the whole surface. CONSTITUTION:N type burying layers 22, 23 are diffused to be formed at the peripheral parts of a P type Si substrate 21, an N type layer 24 is grown epitaxially on the whole surface containing the burying layers thereof, and the laminated films of SiO2 films 25 and Si3N4 films 26 are formed thereon separating by narrow openings 28, 29. Then etching is performed using a photo resist film 27 as a mask to dig deep grooves 30, 31 in the openings 28, 29 to get into the substrate 21, P type channel checking regions 32, 33 are provided on the bases thereof, SiO2 films 34 are adhered extending from the upper parts of the bases over the side walls, and an Si3N4 film 35 is provided on the whole surface. After then, a shallow groove 36 is dug in the layer 24 between the grooves 30, 31, and a polycrystalline Si layer 37 is deposited on the whole surface burying the grooves thereof wholly. Then heat treatment is performed to convert the surface layer part of the layer 37 into SiO2 films 41-43, and the surface is flattened.，下面是Manufacture of semiconductor device专利的具体信息内容。
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
| 基于复合介质栅的双器件光敏探测单元、探测器及其方法 | 2020-05-13 | 554 |
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| 一种可控硅器件及其制备方法 | 2020-05-11 | 778 |
| 应用于可重构环形天线的GaAs固态等离子pin二极管制备方法 | 2020-05-13 | 690 |
| 一种基于SCR结构的新型ESD保护器件 | 2020-05-16 | 604 |
| 一种注塑机电柜 | 2020-05-15 | 444 |
| 受光元件以及测距模块 | 2020-05-08 | 582 |
| 一种多芯同轴注塑电连接器插头 | 2020-05-14 | 932 |
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