Manufacture of double sided mesa type semiconductor device
专利汇可以提供Manufacture of double sided mesa type semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE:To prevent the generation of cracks on a wafer by a method wherein a number of mesa grooves are provided on the front and back sides of a semiconductor wafer leaving the prescribed intervals, the glass of the same thickness is buried, and after said glass has been sintered, grooves non-reaching the bottom part are provided on one side of the glass by performing a machine work, then grooves reaching the wafer are provided by irradiating a laser beam, and the above is isolated by bending the wafer. CONSTITUTION:A plurality of thyristor elements 10, whereon P type regions 3 and 4 are formed on the front and back sides and an N type region 5 is formed in the region 4, are provided on an N type Si substrate 2, and the substrate 2 is isolated by cutting for every element 19 as follows. Mesa grooves 7 and 8 opposing with each other are provided on the front and back sides of the substrate 2 leaving equal intervals, glass 9 and 10 of the same thickness is filled therein and sintered. Then, a groove 17 which is not entering the substrate 2 is provided on the center part of one of the glass using a dicing blade, and then a deep groove 18 entering the substrate 2 is formed by irradiating a laser beam on said groove 17, thereby enabling to prevent the generation of exfoliation of the element 19 even when the substrate 2 is cut by bending.，下面是Manufacture of double sided mesa type semiconductor device专利的具体信息内容。
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