Manufacture of semiconductor device
专利汇可以提供Manufacture of semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE:To isolate between elements by forming a high density impurity layer on V-shaped groove surface on an Si substrate from a mask window, anisotropically etching it to form the further deep groove, thereby allowing the impurity layer to remain on the vertical surface and simply forming a channel cut layer with good controllability. CONSTITUTION:An Si3N4 mask 12 is covered on a p type Si substrate 11, which is then anisotropically etched, a V-shaped groove 14 is formed, B ions are implanted, the substrate is then heat treated to form a p type layer 15. Then, a further deep groove 16 is formed by reactive ion etching, and a p type channel cut layer 15' is allowed to remain on the vertical side face. Subsequently, a CVD SiO2 film 17 is accumulated in a sufficiently thick film, the entire surface is etched to the surface of the mask 12, and the mask 12 is then removed. Then, an element isolating layer 19 having the film 18 which is projected from the surface of the substrate 11 is obtained. Thereafter, an n-channel MOSFET can be obtained by an ordinary method. According to this method, the channel cut layer is formed partly of entirely on the side face of the convex element region simply and with good controllability to isolate the element, thereby improving the reliability of a semiconductor device.，下面是Manufacture of semiconductor device专利的具体信息内容。
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
| 基于复合介质栅的双器件光敏探测单元、探测器及其方法 | 2020-05-13 | 554 |
| 深槽隔离工艺方法 | 2020-05-15 | 354 |
| 浅槽纹理区域和相关方法 | 2020-05-11 | 71 |
| 具有改进的相位检测像素的BSI CMOS图像传感器 | 2020-05-13 | 304 |
| 一种可控硅器件及其制备方法 | 2020-05-11 | 778 |
| 应用于可重构环形天线的GaAs固态等离子pin二极管制备方法 | 2020-05-13 | 690 |
| 一种基于SCR结构的新型ESD保护器件 | 2020-05-16 | 604 |
| 一种注塑机电柜 | 2020-05-15 | 444 |
| 受光元件以及测距模块 | 2020-05-08 | 582 |
| 一种多芯同轴注塑电连接器插头 | 2020-05-14 | 932 |
高效检索全球专利专利汇是专利免费检索,专利查询,专利分析-国家发明专利查询检索分析平台，是提供专利分析，专利查询，专利检索等数据服务功能的知识产权数据服务商。
我们的产品包含105个国家的1.26亿组数据，免费查、免费专利分析。
专利汇分析报告产品可以对行业情报数据进行梳理分析，涉及维度包括行业专利基本状况分析、地域分析、技术分析、发明人分析、申请人分析、专利权人分析、失效分析、核心专利分析、法律分析、研发重点分析、企业专利处境分析、技术处境分析、专利寿命分析、企业定位分析、引证分析等超过60个分析角度，系统通过AI智能系统对图表进行解读，只需1分钟，一键生成行业专利分析报告。
