Semiconductor device
专利汇可以提供Semiconductor device专利检索，专利查询，专利分析的服务。并且PURPOSE:To obtain an element isolating region having a small occupying area by forming a deep narrow groove through the anisotropic etching of the substrate of a (110) face and shaping a deep diffusion layer. CONSTITUTION:A mask 11 is executed to the (110) face of the Si substrate 10, and a pattern 12 is formed in a rhombus having the direction and the direction inclined to said direction at 70.5 deg.. A (111) face is hardly etched more than the (110) face through anisotropic etching by a KOH aqueous solution, and the deep groove of a vertical wall surface is formed without the etching of a side surface. when rhombic etched grooves 21, 22 are formed to an N epitaxial layer 3 on a P type Si substrate 1 according to this method, width can be shaped in approximately 1-3mum because the side surface is not etched, the grooves with approximately 1mum width are buried with SiO2 through the oxidation of the surface, and insulating resin is filled when the width is said value or higher. Or diffusion and isolation are conducted at the same time as the diffusion of a P base, 10mum or lower is also sufficient as groove width at that time. According to such constitution, the occupying area of the isolation layer can be reduced more than a V-shaped groove, and the degree of integration of the device is increased.，下面是Semiconductor device专利的具体信息内容。
| 标题 | 发布/更新时间 | 阅读量 |
|---|---|---|
| 基于复合介质栅的双器件光敏探测单元、探测器及其方法 | 2020-05-13 | 554 |
| 深槽隔离工艺方法 | 2020-05-15 | 354 |
| 浅槽纹理区域和相关方法 | 2020-05-11 | 71 |
| 具有改进的相位检测像素的BSI CMOS图像传感器 | 2020-05-13 | 304 |
| 一种可控硅器件及其制备方法 | 2020-05-11 | 778 |
| 应用于可重构环形天线的GaAs固态等离子pin二极管制备方法 | 2020-05-13 | 690 |
| 一种基于SCR结构的新型ESD保护器件 | 2020-05-16 | 604 |
| 一种注塑机电柜 | 2020-05-15 | 444 |
| 受光元件以及测距模块 | 2020-05-08 | 582 |
| 一种多芯同轴注塑电连接器插头 | 2020-05-14 | 932 |
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