Semiconductor integrated circuit device
专利汇可以提供Semiconductor integrated circuit device专利检索，专利查询，专利分析的服务。并且PURPOSE:To avoid any defects such as cavities in the groove as well as the characteristic deterioration due to hot carrier implantation and the stress concentration due to oxidation by a method wherein an element isolating groove exceeding 3mum in depth is made on the main surface while a polycrystalline silicon film and silicon nitride film exceeding 1mum in depth coated by vapor growing process as the groove filling materials are respectively buried in the groove deep part and the groove shallow part. CONSTITUTION:Within an element isolating groove exceeding 3mum in depth, polycrystalline silicon film is buried in the groove deep part 105 to improve the coating property on the groove bottom part and the groove side part for avoiding any defect such as cavities etc. in the groove after the burying process. Besides, a silicon film exceeding 1mum in depth coated by vapor growing process is buried in the groove shallow part 106 to avoid any characteristic deterioration due to hot carrier implantation in case of operating the titled device. Furthermore the stress due to oxidation on the groove corner part may be restricted to the minimum since the silicon oxide film 106 buried in the groove shallow part is grown by the vapor growing process.，下面是Semiconductor integrated circuit device专利的具体信息内容。
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