Insulating and isolating method for semiconductor integrated circuit
专利汇可以提供Insulating and isolating method for semiconductor integrated circuit专利检索，专利查询，专利分析的服务。并且PURPOSE:To bury an insulating isolating groove easily and in excellent flatness by making the width of a shallow groove and the depth of a deep groove predetermined magnification or lower. CONSTITUTION:The width W of the shallow groove 18 reaching a collector buried layer 12 is formed at value less than approximately 1.73 times as large as the depth D of the deep groove 19 penetrating the collector buried layer 12, the surfaces of the grooves are oxidized and an SiO2 film 20 is formed, an Si3N4 film 21, polycrystal Si 22 and an SiO2 film 23 are shaped onto the film 20, and a pattern opposite to the patterns of the grooves is formed by a photo-resist 24. The SiO2 film 23 is etched while using the photo-resist as a mask, the polycrystal Si 22 is etched in isotropic form until the surface is flattened while employing the SiO2 film 23 as a mask, and the surface is oxidized and a SiO2 film 25 is shaped. A protective film 26, a CN diffusion layer 27, a base diffusion layer 28, an emitter diffusion layer 29, an emitter electrode 30, a base electrode 31 and a collector electrode 32 are shaped.，下面是Insulating and isolating method for semiconductor integrated circuit专利的具体信息内容。
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